Abstract: A biaxially textured crystalline layer formed on a substrate using ion beam assisted deposition (IBAD) is provided. The biaxially textured crystalline layer includes an oriented CaF2 crystalline layer having crystalline grains oriented in both in-plane and out-of-plane directions, where the out-of-plane orientation is a (111) out-of-plane orientation. The oriented CaF2 crystalline layer is disposed for growth of a subsequent epitaxial layer and the CaF2 crystalline layer is an IBAD CaF2 layer. The biaxially textured CaF2 layer can be used in a photovoltaic cell, an electronic or optoelectronic device, an integrated circuit, an optical sensor, or a magnetic device.

Abstract: This work provides a new approach for epitaxial liftoff. Instead of using a sacrificial layer that is selectively etched chemically, the sacrificial layer selectively absorbs light that is not absorbed by other parts of the structure. Under sufficiently intense illumination with such light, the sacrificial layer is mechanically weakened, melted and/or destroyed, thereby enabling epitaxial liftoff. The perimeter of the semiconductor region to be released is defined (partially or completely) by lateral patterning, and the part to be released is also adhered to a support member prior to laser irradiation. The end result is a semiconductor region removed from its substrate and adhered to the support member.

Abstract: This work provides a new approach for epitaxial liftoff. Instead of using a sacrificial layer that is selectively etched chemically, the sacrificial layer selectively absorbs light that is not absorbed by other parts of the structure. Under sufficiently intense illumination with such light, the sacrificial layer is mechanically weakened, melted and/or destroyed, thereby enabling epitaxial liftoff. The perimeter of the semiconductor region to be released is defined (partially or completely) by lateral patterning, and the part to be released is also adhered to a support member prior to laser irradiation. The end result is a semiconductor region removed from its substrate and adhered to the support member.

Abstract: A biaxially textured crystalline layer formed on a substrate using ion beam assisted deposition (IBAD) is provided. The biaxially textured crystalline layer includes an oriented CaF2 crystalline layer having crystalline grains oriented in both in-plane and out-of-plane directions, where the out-of-plane orientation is a (111) out-of-plane orientation. The oriented CaF2 crystalline layer is disposed for growth of a subsequent epitaxial layer and the CaF2 crystalline layer is an IBAD CaF2 layer. The biaxially textured CaF2 layer can be used in a photovoltaic cell, an electronic or optoelectronic device, an integrated circuit, an optical sensor, or a magnetic device.

Abstract: A method of forming a self-organized nanostructured solar cell is provided. The method includes depositing a semiconductor film on a substrate, where the semiconductor film includes a mixture of at least two constituents, then activating the semiconductor film during or after the deposition. Here, the activated semiconductor film self-assembles into an organized nanostructure geometry on the substrate, where the organized nanostructure includes a first structure of the at least one constituent having a first polarity and a second structure of the at least one constituent having a second polarity opposite to the first polarity. Further, the invention includes depositing a contact on a top surface of the organized nanostructure geometry.

Abstract: A biaxially textured crystalline layer formed on a substrate is provided. The biaxially textured crystalline layer includes an oriented CaF2 crystalline layer having crystalline grains oriented in both in-plane and out-of-plane directions, where the out-of-plane orientation is a (111) out-of-plane orientation. The oriented CaF2 crystalline layer is disposed for growth of a subsequent epitaxial layer and the CaF2 crystalline layer comprises an IBAD CaF2 layer. The biaxially textured CaF2 layer can be used in a photovoltaic cell, an electronic or optoelectronic device, an integrated circuit, an optical sensor, or a magnetic device.

Abstract: A method of forming a self-organized nanostructured solar cell is provided. The method includes depositing a semiconductor film on a substrate, where the semiconductor film includes a mixture of at least two constituents, then activating the semiconductor film during or after the deposition. Here, the activated semiconductor film self-assembles into an organized nanostructure geometry on the substrate, where the organized nanostructure includes a first structure of the at least one constituent having a first polarity and a second structure of the at least one constituent having a second polarity opposite to the first polarity. Further, the invention includes depositing a contact on a top surface of the organized nanostructure geometry.

Abstract: A method for producing oriented, intermetallic, thin film structures having uniaxial magnetic, electronic, optical, and mechanical properties. Artificial superlattices (10) are assembled by sputter deposition of alternating layers of the component metals of the target intermetallic compound on an aligned substrate (16). Either single crystal substrates or crystallographically textured substrates may be used to induce alignment of the deposited layers (10, 12) in the method of the present invention. Annealing of the resulting superlattice (10) generates aligned, thin film intermetallic compounds (38) of the component metals at the interfaces (44) of the superlattice (10), the thin film intermetallic compounds having pronounced, uniaxial properties.

Abstract: Fully crystalline forms of rare earth-transition metal-boron compositions can be attrited under high-energy conditions (such as high energy ball milling) to product homogeneous alloy with crystals smaller than single magnetic domain size. Such alloy can be annealed or hot formed to produce permanent magnets with high magnetic energy products.