Abstract: A microwave reactor for decomposing waste green house gases resulting from the manufacture of semiconductors and from other industrial processes. The microwave reactor includes a plasma chamber having a gas inflow port spaced apart from a gas outflow port for transporting gases through the plasma chamber. A gas plasma is generated in the plasma chamber to facilitate the gas decomposition. The structure of the microwave reactor includes an insulating cover protruding into the plasma chamber and forming an internal cavity that is isolated from gases in the plasma chamber. A microwave antenna extends into the internal cavity of the plasma chamber to couple the microwave energy into plasma chamber for causing a plasma to form in the gases.

Abstract: A microwave reactor for decomposing waste green house gases resulting from the manufacture of semiconductors and from other industrial processes. The microwave reactor includes a plasma chamber having a gas inflow port spaced apart from a gas outflow port for transporting gases through the plasma chamber. A gas plasma is generated in the plasma chamber to facilitate the gas decomposition. The structure of the microwave reactor includes an insulating cover protruding into the plasma chamber and forming an internal cavity that is isolated from gases in the plasma chamber. A microwave antenna extends into the internal cavity of the plasma chamber to couple the microwave energy into plasma chamber for causing a plasma to form in the gases.

Abstract: A process gas decomposition reactor featuring two intertwined helical coils surrounding a gas flow path. Each of the two coils is energized by a separate magnetron having an associated waveguide and an inductive structural element which couples the microwave energy into the coil. The magnetic flux lines from the coil serve to confine ions and electrons within the coil, causing collisions and hence ionization of gas entering a flow path through the coil. The gas, containing HFCs and PFCs is broken down by such collisions with ions and electrons within the gas plasma. The gas displaced at the end of the coil contains decomposition products from the HFCs and PFCs.

Abstract: Apparatus for measuring wafer support pedestal temperature in a semiconductor wafer processing system. The apparatus measures infrared energy emitted by the bottom of the pedestal via a tube having one end inserted in a bore through the underside of the cathode pedestal base. The distal end of the tube is coupled to a temperature sensor. Both the tube and temperature sensor are fitted with insulating sleeve adapters to suppress unwanted RF signals from coupling to the sensor.

Abstract: An etchant composition of nitrogen trifluoride and chlorine, preferably also including a passivation material such as hydrogen bromide, etches tungsten silicide-polysilicon gate layers with high selectivity to a thin underlying silicon oxide gate oxide layer to form straight wall, perpendicular profiles with low microloading and excellent profile control.