Abstract: A lenticular optical system is described in which a composite image is viewable through a lens sheet from a first angle and an object or image placed at a preselected distance beneath the composite image is viewable from a second angle. Optical designs and alignment processes are disclosed which make possible the economical production of thin materials which facilitate the manufacturing and utilization of the optical system in packaging and the like.

Abstract: A bandgap reference voltage circuit can advantageously maximize performance, i.e. provide a stable output voltage as a function of input supply voltage and/or temperature. The bandgap reference voltage circuit can include a modified Brokaw cell and a cascode amplifier. The modified Brokaw cell can include two transistors, each transistor including a base, an emitter, and a collector. The collectors of the transistors can be folded into input terminals of the cascode amplifier, thereby providing an extremely compact circuit implementation. In one embodiment, the Brokaw cell can include two lateral PNP (LPNP) transistors, thereby allowing manufacturing of the bandgap reference voltage circuit with standard CMOS technology. Of importance, an output of the bandgap reference voltage circuit can provide a source voltage to the cascode amplifier, thereby ensuring a stable voltage source to the circuit.

Abstract: A source follower can include a primary driving device that is limited by its threshold voltage as well as a secondary driving device that is not limited by its threshold voltage, thereby allowing the secondary driving device to drive the output voltage fully to the desired voltage rail. This secondary driving device can be activated substantially at the same time the primary driving device is reaching its maximum voltage transfer, thereby ensuring a linear output voltage transfer. This source follower can be implemented in an amplifier. This amplifier, which can output true rail-to-rail voltages, can advantageously provide optimal performance, particularly in low power applications.

Abstract: A bandgap reference voltage circuit can advantageously maximize performance, i.e. provide a stable output voltage as a function of input supply voltage and/or temperature. The bandgap reference voltage circuit can include a modified Brokaw cell and a cascode amplifier. The modified Brokaw cell can include two transistors, each transistor including a base, an emitter, and a collector. The collectors of the transistors can be folded into input terminals of the cascode amplifier, thereby providing an extremely compact circuit implementation. In one embodiment, the Brokaw cell can include two lateral PNP (LPNP) transistors, thereby allowing manufacturing of the bandgap reference voltage circuit with standard CMOS technology. Of importance, an output of the bandgap reference voltage circuit can provide a source voltage to the cascode amplifier, thereby ensuring a stable voltage source to the circuit.

Abstract: A charge pump system and method including a charge pump and a pulse width modulated (PWM) controller are provided. The charge pump includes a pump capacitor, a reservoir capacitor, and pump circuitry. During a first phase, the pump circuit couples the pump capacitor between a first supply voltage and a second supply voltage. During a second phase, the pump circuit couples the pump capacitor and the reservoir capacitor in series between the first supply voltage and an output terminal of the charge pump system. The PWM controller, which is coupled to the pump circuitry, determines the phase of the charge pump.

Abstract: A charge pump system and method including a charge pump and a pulse width modulated (PWM) controller are provided. The charge pump includes a pump capacitor, a reservoir capacitor, and pump circuitry. During a first phase, the pump circuit couples the pump capacitor between a first supply voltage and a second supply voltage. During a second phase, the pump circuit couples the pump capacitor and the reservoir capacitor in series between the first supply voltage and an output terminal of the charge pump system. The PWM controller, which is coupled to the pump circuitry, determines the phase of the charge pump.

Abstract: An improved level shifter circuit that toggles a “flying Flip-Flop” comprising a cross-coupled inverter pair with control devices driven out of phase through a pair of cascode transistors. The cross-coupled inverter pair provides pull-up to the positive rail, clamping to a High Side-Common (HSC), and providing Hysteretic Switching. The cascode transistors restrict the pull-down of the control devices, thereby preventing continuous current conduction.

Abstract: An ESD protection circuit, suitable for use as part of an integrated circuit, limits the voltage potential at the contacts of the integrated circuit to a voltage potential difference range relative to, though extending beyond the voltage source potentials of the circuit protected. The ESD protection is effective regardless of whether the integrated circuit is powered. The ESD protection circuit includes a clamp subcircuit for limiting the voltage potential at a clamp point to a first voltage range approximately defined by the voltage source potentials and a voltage offset subcircuit, coupled between the clamp point and an integrated circuit contact, to establish a second voltage range encompassing the first voltage range. The voltage offset subcircuit conducts current between the clamp point and the contact to limit the voltage potential at the contact to the second voltage range.

Abstract: An improved field terminating structure for a semiconductor device provides a well defined voltage gradient in the vicinity of a p-n junction to reduce the electric field near the junction and increase the junction breakdown voltage. The structure includes one or more MOS-type field effect transistors operably connected to one of the regions of the junction. A portion of the potential difference applied across the junction corresponding to the threshold voltage of each transistor is distributed across the surface of the device near the junction.