Abstract: A memory device includes a memory material portion, and an ovonic threshold switch selector element. The ovonic threshold switch selector element includes a first carbon-containing electrode comprising carbon and a metal, a second carbon-containing electrode comprising the carbon and the metal, and an ovonic threshold switch material portion located between the first electrode and the second electrode.

Abstract: A magnetoresistive memory device includes first electrode, a second electrode that is spaced from the first electrode, and a perpendicular magnetic tunnel junction layer stack located between the first electrode and the second electrode. The perpendicular magnetic tunnel junction layer stack includes a first texture-breaking nonmagnetic layer including a first nonmagnetic transition metal, a second texture-breaking nonmagnetic layer including a second nonmagnetic transition metal, a magnesium oxide dielectric layer located between the first and second texture-breaking nonmagnetic layers, a reference layer located between the first and second texture-breaking nonmagnetic layers, a free layer located between the first and second texture-breaking nonmagnetic layers, and a spinel layer located between the reference layer and the free layer, and including a polycrystalline spinel material having (001) texture along an axial direction extending between the reference layer and the free layer.

Abstract: A magnetoresistive memory device includes first electrode, a second electrode that is spaced from the first electrode, and a perpendicular magnetic tunnel junction layer stack located between the first electrode and the second electrode. The perpendicular magnetic tunnel junction layer stack includes a first texture-breaking nonmagnetic layer including a first nonmagnetic transition metal, a second texture-breaking nonmagnetic layer including a second nonmagnetic transition metal, a magnesium oxide dielectric layer located between the first and second texture-breaking nonmagnetic layers, a reference layer located between the first and second texture-breaking nonmagnetic layers, a free layer located between the first and second texture-breaking nonmagnetic layers, and a spinel layer located between the reference layer and the free layer, and including a polycrystalline spinel material having (001) texture along an axial direction extending between the reference layer and the free layer.

Abstract: Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.

Abstract: Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.

Abstract: Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.

Abstract: Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.

Abstract: Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.

Abstract: Resistive memory cells containing nanoparticles are formed between two electrodes. The nanoparticles may be embedded in a matrix or sintered together without a matrix. The memory cells may be projected memory cells or barrier modulated cells. Polymeric ligands may be used to deposit the nanoparticles over a substrate, followed by an optional removal or replacement of the polymeric ligands.

Abstract: Resistive memory cells containing nanoparticles are formed between two electrodes. The nanoparticles may be embedded in a matrix or sintered together without a matrix. The memory cells may be projected memory cells or barrier modulated cells. Polymeric ligands may be used to deposit the nanoparticles over a substrate, followed by an optional removal or replacement of the polymeric ligands.

Abstract: An apparatus and method is disclosed for orienting the magnetic anisotropy of longitudinal patterned magnetic recording media. A disk-shaped longitudinal granular magnetic recording medium is provided having a high orientation ratio in the circumferential direction. The medium is then patterned to form a uniform array of magnetic islands. The magnetic islands are then irradiated with ions to increase the magnetic exchange coupling between the grains of each island. This aligns the axes of magnetic anisotropy of the individual grains with the average axis of magnetic anisotropy of the grains, thereby aligning the magnetic anisotropy of each island along the circumferential direction.

Abstract: An apparatus and method is disclosed for orienting the magnetic anisotropy of longitudinal patterned magnetic recording media. A disk-shaped longitudinal granular magnetic recording medium is provided having a high orientation ratio in the circumferential direction. The medium is then patterned to form a uniform array of magnetic islands. The magnetic islands are then irradiated with ions to increase the magnetic exchange coupling between the grains of each island. This aligns the axes of magnetic anisotropy of the individual grains with the average axis of magnetic anisotropy of the grains, thereby aligning the magnetic anisotropy of each island along the circumferential direction.

Abstract: Memory cell structures make use of the extraordinary Hall effect (EHE) for increased data storage capacity. A memory cell has a ferromagnetic structure which includes at least a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer in between the first and the second ferromagnetic layers. The first and the second ferromagnetic layers exhibit perpendicular magnetic anisotropy and have magnetic moments which are set in accordance with one of a plurality of magnetic orientation sets of the ferromagnetic structure, and the ferromagnetic structure exhibits one of a plurality of predetermined extraordinary Hall resistances RH in accordance with the magnetic orientation set. The extraordinary Hall resistance is exhibited between first and second ends of the ferromagnetic structure across a path which intersects a bias current path between third and fourth ends of the ferromagnetic structure.

Abstract: A thermally-assisted perpendicular magnetic recording head includes a write pole tip for generating a magnetic write field in the perpendicular magnetic recording layer, a magnetic shield that confines the write field essentially to the data track to be recorded, an electrically resistive heater for heating the recording layer in the presence of the write field, and a return pole. The write pole tip width essentially defines data track width and is substantially surrounded by the magnetic shield. The shield may include side shields with ends located on opposite sides of the write pole tip and a trailing shield having an end spaced from the write pole tip. The resistive heater is wider than the data track and heats both the data track and adjacent tracks, but thermally-assisted magnetic recording occurs only in the data track because the confined magnetic field in the adjacent tracks is less than the required write field.

Abstract: Magnetic medium recording performance can be enhanced by irradiating a magnetic medium with ions having an acceleration voltage of between 10 keV and 100 keV to induce exchange coupling between grains of the magnetic medium. The magnetic medium is exposed to a cumulative ion dosage of between 1013 ions/cm2 and 1017 ions/cm2 using a non-patterned exposure of the magnetic medium. The ions can be selected from the group consisting of H+, He+, Ne+, Ar+, Kr+, and Xe+. Alternatively, the ions can be selected from the group consisting of Ga+, Hg+, and In+.

Abstract: A magnetic recording system, such as a magnetic recording disk drive, uses a patterned perpendicular magnetic recording medium where each magnetic block or island contains a stack of individual magnetic cells to provide multilevel recording. Each cell in an island is formed of a material or set of materials to provide the cell with perpendicular magnetic anisotropy and is a single magnetic domain. Each cell is magnetically decoupled from the other cells in its island by nonmagnetic spacer layers. Thus each cell can have a magnetization (magnetic moment) in one of two directions (into or out of the plane of the layer making up the cell), and this magnetization is independent of the magnetization of the other cells in its island. This permits multiple magnetic levels or states to be recorded in each magnetic island.

Abstract: A patterned perpendicular magnetic recording medium has magnetic islands that contain stacks of individual magnetic cells to provide multilevel recording. Each cell in an island is formed of a material or set of materials to provide the cell with perpendicular magnetic anisotropy and is a single magnetic domain. Each cell is magnetically decoupled from the other cells in its island by nonmagnetic spacer layers. Thus each cell can have a magnetization (magnetic moment) in one of two directions (into or out of the plane of the layer making up the cell), and this magnetization is independent of the magnetization of the other cells in its island. This permits multiple magnetic levels or states to be recorded in each magnetic island.

Abstract: A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.