Abstract: Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB2X5, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.

Abstract: Ferroelectric barium titanate (BaTiO3) epitaxial films grown by metal-organic chemical vapor deposition using a barium precursor having a low melting point and a stable vapor pressure.

Abstract: Methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds having the formula A2P2X6, where A represents Pb or Sn and X represents S or Se, as photoelectric materials.

Abstract: Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula AB2X5, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.

Abstract: Barium titanate thin film waveguides and related modulator and devices with photonic crystal structures to promote wide bandwidths, low operating voltages and small footprint.

Abstract: Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.

Abstract: Methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds having the formula A2P2X6, where A represents Pb or Sn and X represents S or Se, as photoelectric materials.

Abstract: Barium titanate thin film waveguides and related modulator and devices with photonic crystal structures to promote wide bandwidths, low operating voltages and small footprint.

Abstract: A switch comprising a spin-transistor and a first control wire. The spin-transistor is configured so that when a magnetic field applied to the spin-transistor is less than a threshold value, the transistor is in a conductive state in which electric current flows through the spin-transistor. When the magnetic field applied to the spin-transistor is greater than the threshold value, the spin-transistor is in a resistive state in which the electric current flowing through the spin-transistor is substantially reduced. The first control wire is for receiving a current to affect the magnetic field applied to the spin-transistor.

Abstract: Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.

Abstract: Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.

Abstract: Ferroelectric barium titanate (BaTiO3) epitaxial films grown by metal-organic chemical vapor deposition using a barium precursor having a low melting point and a stable vapor pressure.

Abstract: A switch comprising a spin-transistor and a first control wire. The spin-transistor is configured so that when a magnetic field applied to the spin-transistor is less than a threshold value, the transistor is in a conductive state in which electric current flows through the spin-transistor. When the magnetic field applied to the spin-transistor is greater than the threshold value, the spin-transistor is in a resistive state in which the electric current flowing through the spin-transistor is substantially reduced. The first control wire is for receiving a current to affect the magnetic field applied to the spin-transistor.

Abstract: An emitter-coupled spin-transistor includes an emitter, a collector and a base. A first control wire receives an input current to create a magnetic field that affects amplification of the spin-transistor. A second transistor also includes an emitter, a collector and a base, where the emitter of the second transistor is coupled to the emitter of the spin-transistor to provide a logic circuit.

Abstract: Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.

Abstract: Systems and methods can perform automatic computation developed using carbon nanotubes and graphene nanoribbons and/or InSb p-n bilayer channel avalanche diodes and wires. Spin logic can provide improvements in speed, power, and area, promising to be a high-performance logic family for the next generation of computing. The systems and methods can replace CMOS, for example, for general computing applications.

Abstract: In one aspect of the present invention, the semiconductor device is a bipolar magnetic junction transistor (MJT), and includes a first non-magnetic semiconductor layer, a second non-magnetic semiconductor layer, and a magnetic semiconductor layer. The first non-magnetic semiconductor layer has majority charge carriers of a first polarity. The second non-magnetic semiconductor layer is disposed adjacent to the first non-magnetic semiconductor layer such that a first junction is formed at a first interface region between the first non-magnetic semiconductor layer and the second non-magnetic semiconductor layer. The magnetic semiconductor layer has majority charge carriers of the first polarity, and is disposed adjacent to the second non-magnetic semiconductor layer such that a second junction is formed at a second interface region between the second non-magnetic semiconductor layer and the magnetic semiconductor layer.

Abstract: Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.

Abstract: In one aspect, the invention relates to logic cells that utilize one or more of spin diodes. By placing one or two control wires on the side of the spin diodes to generate magnetic fields in the spin diodes due to input currents, the logic cell can be changed from one logic gate to another logic gate. The unique feature leads to field logic devices in which simple instructions can be used to construct a whole new set of logic gates.

Abstract: Systems and methods can perform automatic computation developed using carbon nanotubes and graphene nanoribbons and/or InSb p-n bilayer channel avalanche diodes and wires. Spin logic can provide improvements in speed, power, and area, promising to be a high-performance logic family for the next generation of computing. The systems and methods can replace CMOS, for example, for general computing applications.