Abstract: A ceramic waveguide includes: a doped metal oxide ceramic core layer; and at least one cladding layer comprising the metal oxide surrounding the core layer, such that the core layer includes an erbium dopant and at least one rare earth metal dopant being: lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, thulium, ytterbium, lutetium, scandium, or oxides thereof, or at least one non-rare earth metal dopant comprising zirconium or oxides thereof. Also included is a quantum memory including: at least one doped polycrystalline ceramic optical device with the ceramic waveguide and a method of fabricating the ceramic waveguide.

Abstract: Disclosed are small molecule inhibitors of ?v?6 integrin, and methods of using them to treat a number of specific diseases or conditions.

Abstract: An apparatus for measuring vital signs and various states of health using the underlying concept of Photoplethysmography (PPG). This apparatus comprises one or more light source(s) and one or more detector(s) configured to measure transmitted and/or reflected light within the digits such as a finger or toe, but can also be applied to other soft tissue elements. The apparatus comprises a means to enhance signal quality, control the volume of interrogated tissue and minimize motion artifact. The apparatus comprises a power source. The apparatus may further comprise at least one processor to receive information from the detector and process measured variations in light intensity. This information may be transmitted wirelessly through technology such as Bluetooth. The apparatus may also comprise a system utilizing inductive charging (“wireless charging”).

Abstract: A method of normalizing digital formats comprises determining a plurality of digital files associated with a user, the plurality of digital files having a plurality of encoding formats; generating a script based on a set of encoding formats predetermined for the plurality of digital files; and based on the generated script, performing at least one of creating and deleting a digital file to conform the plurality of encoding formats to the set of predetermined encoding formats.

Abstract: A method for storing and retrieving data is disclosed. The method for storing data includes loading data having a first format from at least one data source of a plurality of data sources; converting the loaded data to a second format; and storing the converted data in one or more data stores.

Abstract: A method and system to mediate selection of choice presentation models are described. A models mediator, implemented using software, hardware or both, may be configured to exercise different choice presentation models, collect and analyze information with respect to how well each model performed in succeeding to convince a respective user to purchase one of the presented subscription plans, and determine how frequently each model should be used to generate a presentation of subscription choices.

Abstract: A cargo management system for a vehicle having a cargo area (e.g., pickup bed) may include various elements. For example, the system may include a rail attachable to the interior surface of the cargo box inner panel, at least one reinforcement plate positionable against the outer surface of the inner panel, and a plurality of fasteners for holding the rail to the inner panel backed by the reinforcement plate. The rail may have a rail portion and a body portion. The body portion is positioned through a slot formed in the bedliner and includes a base and a pair of opposed side walls connecting the base with the rail portion. Each reinforcement plate has apertures to accommodate multiple mechanical fasteners and reinforcement segments, which are attached by reinforcement segment bridges.

Abstract: A cargo management system for a vehicle having a cargo area such as a pickup bed is disclosed. The system includes a rail attachable to the interior surface of the cargo box inner panel, at least one reinforcement plate positionable against the outer surface of the inner panel, and a plurality of fasteners for holding the rail to the inner panel backed by the reinforcement plate. At least one cleat is fitted to the rail. The cleat can be moved and selectively positioned on the rail. The rail has a rail portion and a body portion. The body portion is positioned through a slot formed in the bedliner. The body portion of the rail includes a base and a pair of opposed side walls connecting the base with the rail portion. The body portion of the rail may include one or more interior walls between the base wall of the body portion and the rail portion. Each reinforcement plate has apertures to accommodate multiple mechanical fasteners, thus eliminating the multiple reinforcement plates of the known technology.

Abstract: A high availability method enabling addition and removal of an application plug-in comprises launching the high availability system using a processor, said high availability system having an application framework (AMF), requesting data obtainable by the application plug-in from the application framework, and when the application plug-in does not exist in the application framework, registering the application plug-in in the application framework. AMF can comprise a list of additional application plug-ins. The list can comprises a unique id, a name, and a path to dynamic load libraries for each application plug-in. AMF can add the application plug-in by adding the application plug-in dynamic load library files to the installation folder and adding application plug-in information to the configuration file. AMF can remove the application plug-in by deleting the application plug-in dynamic load library files from the installation folder and deleting the application plug-in information from the configuration file.

Abstract: Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Abstract: The present invention relates to an architecture for displaying data on a remote display for use with an electric device, including a network system, a first device, a second device, a first display, a second display and a first input unit. When the first device and the second device respectively perform a target procedure, a user inputs a first specific data into the first device via the first input unit. The first device then transmits the first specific data to the second device via a first communication protocol and the network system. The second display subsequently displays a second specific data via the target procedure and the first specific data.

Abstract: Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Abstract: Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Abstract: Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Abstract: Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Abstract: Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Abstract: Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Abstract: Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

Abstract: A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.

Abstract: A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. In one aspect, the method and system also include utilizing at least one storage for storing a state of each of the magnetic storage cells determined during a read operation made during a write operation. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segment at substantially the same time as the portion of the magnetic cells are written.