Patents by Inventor Bruce Yeh

Bruce Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LDMOS and CMOS integrated circuit and method of making
    Patent number: 6818494
    Abstract: An integrated circuit (IC) is formed on a substrate. The IC has a first well having a first dopant concentration that includes a second conductivity low-voltage transistor. The IC also has a second well having a dopant concentration equal to the first dopant concentration that includes a first conductivity high-voltage transistor. In addition, the IC has a third well having a second dopant concentration of an opposite type than the first well that includes a first conductivity low-voltage transistor. The first conductivity low-voltage transistor and the second conductivity low-voltage transistor are created without a threshold voltage (Vt) implant.
    Type: Grant
    Filed: March 26, 2001
    Date of Patent: November 16, 2004
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Zhizang Chen, Bao-Sung Bruce Yeh, S. Jonathan Wang, Cathy P. Peltier
  • Data storage medium having layers acting as transistor
    Patent number: 6804137
    Abstract: A re-recordable data storage medium of one embodiment includes a substrate layer, a phase-changeable layer, and an intermediate layer. The substrate layer has a semiconductor type selected from p-type and n-type. The phase-changeable layer has a first phase corresponding to a first storable logical value, and a second phase corresponding to a second storable logical value. The phase-changeable layer has a semiconductor type identical to that of the substrate layer. The intermediate layer is between the phase-changeable layer and the substrate layer, and has a semiconductor type opposite to that of the phase-changeable and substrate layer. The substrate, phase-changeable, and intermediate layers act as a transistor under selective illumination of the phase-changeable layer.
    Type: Grant
    Filed: June 12, 2003
    Date of Patent: October 12, 2004
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Bao-Sung Bruce Yeh, Michael J. Regan
  • Transistor with group III/VI emitter
    Publication number: 20040061132
    Abstract: A transistor includes a base, a collector, and an emitter comprising a group III/VI semiconductor. Microcircuits having at least one metal oxide semiconductor (MOS) transistor and the previously described transistor are provided. Processes for manufacturing a transistor and a BiMOS microcircuit are also provided.
    Type: Application
    Filed: September 18, 2003
    Publication date: April 1, 2004
    Inventors: Hung Liao, Bao-Sung Bruce Yeh
  • Transistor with group III/VI emitter
    Publication number: 20030230762
    Abstract: A transistor includes a base, a collector, and an emitter comprising a group III/VI semiconductor. Microcircuits having at least one metal oxide semiconductor (MOS) transistor and the previously described transistor are provided. Processes for manufacturing a transistor and a BiMOS microcircuit are also provided.
    Type: Application
    Filed: June 14, 2002
    Publication date: December 18, 2003
    Inventors: Hung Liao, Bao-Sung Bruce Yeh