Patents by Inventor Bruck Jehoshua

Bruck Jehoshua has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Information representation and coding for nonvolatile memories
    Patent number: 8780620
    Abstract: A memory device having a plurality of cells, each of which stores a value, where the values of the cells are mapped to discrete levels and the discrete levels represent data, is programmed by determining a maximum number of cell levels in the memory device, and determining the set of values that are associated with each of the cell levels. The maximum number of cell levels for the memory device is determined by an adaptive programming system connected to the memory device, based on a plurality of cell values attained by at least one cell of the memory device, in response to voltage applied by the adaptive programming system to the cells of the memory device. The adaptive programming system associates, for each of the cell levels, a different set of cell values of the plurality of cell values attained by the cells to which voltage is applied.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: July 15, 2014
    Assignees: The Texas A&M University, California Institute of Technology
    Inventors: Anxiao Jiang, Bruck Jehoshua, Zhiying Wang, HongChao Zhou
  • INFORMATION REPRESENTATION AND CODING FOR NONVOLATILE MEMORIES
    Publication number: 20120096234
    Abstract: A memory device having a plurality of cells, each of which stores a value, where the values of the cells are mapped to discrete levels and the discrete levels represent data, is programmed by determining a maximum number of cell levels in the memory device, and determining the set of values that are associated with each of the cell levels. The maximum number of cell levels for the memory device is determined by an adaptive programming system connected to the memory device, based on a plurality of cell values attained by at least one cell of the memory device, in response to voltage applied by the adaptive programming system to the cells of the memory device. The adaptive programming system associates, for each of the cell levels, a different set of cell values of the plurality of cell values attained by the cells to which voltage is applied.
    Type: Application
    Filed: September 20, 2011
    Publication date: April 19, 2012
    Applicants: The Texas A&M University, California Institute of Technology
    Inventors: Anxiao Jiang, Bruck Jehoshua, Zhiying Wang, HongChao Zhou