Abstract: A light-emitting diode may include: a first n-doped semiconductor portion; a second p-doped semiconductor portion; an active zone disposed between the first and second portions and including at least one emitting semiconductor portion; a layer that is electrically conductive and optically transparent to at least one wavelength of the UV range configured to be emitted from the emitting portion, the layer being such that the second portion is disposed between the layer and the active zone. The semiconductors of the first portion and of the emitting portion may include compounds including nitrogen atoms as well as atoms of aluminum and/or of gallium. The semiconductor of the second portion may include AlX2Ga(1-X2-Y2)InY2N that is p-doped with magnesium atoms, wherein X2>0, Y2>0, and X2+Y2<1, and in which the atomic concentration of magnesium is greater than 1017 at/cm3. The electrically conductive layer may include doped diamond.

Abstract: A light-emitting diode is provided, including: a first layer of n-doped AlX1Ga(1-X1-Y1)InY1N, with X1>0 and X1+Y1?1; a second layer of p-doped AlX2Ga(1-X2-Y2)InY2N, with X2>0 and X2+Y2?1; an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure; nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and an ohmic contact layer in contact with the nanowires. A method for producing a light-emitting diode is also provided.

Abstract: The invention relates to a method for manufacturing a transmitter device (10) comprising the steps of: providing of a substrate (70) made of a semiconductor material having a first face (85) defining the substrate (70) in a direction (N) normal to the first face (85), implanting, through the first face (85), atoms capable of forming a weakened portion in the substrate, the substrate (70) further comprising a surface portion (92) and an internal portion (95), the weakened portion (90) separating the surface portion (92) from the internal portion (95) in the normal direction (N), forming, on the first face (85), a light-emitting diode (20), bonding a face (150) of the diode (20) to a second face (155) of a support (15), and breaking the weakened portion (90) in order to separate the surface portion (92) from the internal portion (95).

Abstract: A process for producing a structure (100) comprising a membrane (3) of a first material, in particular indium-tin oxide, in contact with receiving ends (13) of a plurality of nanowires (1), the process comprising forming a nanowire device (10) comprising the receiving ends (13), the receiving ends being formed so as to form planar surfaces, and (ii) placing, especially by transfer, a membrane device (3; 34) directly on the nanowires the planar surfaces of the ends for receiving the membrane.

Abstract: A process for producing a structure (100) comprising a membrane (3) of a first material, in particular indium-tin oxide, in contact with receiving ends (13) of a plurality of nanowires (1), the process comprising forming a nanowire device (10) comprising the receiving ends (13), the receiving ends being formed so as to form planar surfaces, and (ii) placing, especially by transfer, a membrane device (3; 34) directly on the nanowires the planar surfaces of the ends for receiving the membrane.

Abstract: The process for the manufacture of a light-emitting diode comprises the following stages: the formation of a stack (1) of layers intended to emit light comprising first (2), second (3) and third (4) layers of aluminum gallium nitride, the said second layer (3), positioned between the first and third layers (2, 4), having an aluminum gallium nitride composition different from that of the first and third layers (2, 4); and the implementation of a demixing of the second layer (3) of aluminum gallium nitride carried out after formation of the said second layer.

Abstract: The process for the manufacture of a light-emitting diode comprises the following stages: the formation of a stack (1) of layers intended to emit light comprising first (2), second (3) and third (4) layers of aluminium gallium nitride, the said second layer (3), positioned between the first and third layers (2, 4), having an aluminium gallium nitride composition different from that of the first and third layers (2, 4); and the implementation of a demixing of the second layer (3) of aluminium gallium nitride carried out after formation of the said second layer.

Abstract: The invention concerns a method for preparing a NIII-V semiconductor. According to the invention, the method includes at least one step of doping a semiconductor of general formula AlxGa1-xN, wherein the atomic number x represents the number between 0 and 1 with a p-type electron-accepting dopant, as well as a co-doping step with a codopant capable of modifying the structure of the valency band. The invention also concerns a semiconductor as well as its use in electronics or optoelectronics. The invention further concerns a device as well as a diode using such a semiconductor.

Abstract: In formation of a quantum dot structure in a light emitting layer, a matrix region (an n-type conductive layer and matrix layers) is formed on a growth underlying layer of AlN whose abundance ratio of Al is higher (or whose lattice constant is smaller) than that in the matrix region by an MBE technique, thereby to realize conditions where compression stress is caused in an in-plane direction perpendicular to the direction of growth of the matrix region, and then to form island crystals by self-organization in the presence of this compression stress. The compression stress inhibits an increase in lattice constant caused by the reduced abundance ratio of Al in the matrix region, i.e., to compensate for a difference in lattice constant between the island crystals and the matrix region. The compression stress functions to enlarge compositional limits for formation of the island crystals by self-organization to the Ga-rich side.

Abstract: The invention concerns a method for preparing a NIII-V semiconductor. According to the invention, the method includes at least one step of doping a semiconductor of general formula AlxGa1-xN, wherein the atomic number x represents the number between 0 and 1 with a p-type electron-accepting dopant, as well as a co-doping step with a codopant capable of modifying the structure of the valency band. The invention also concerns a semiconductor as well as its use in electronics or optoelectronics. The invention further concerns a device as well as a diode using such a semiconductor.

Abstract: In formation of a quantum dot structure in a light emitting layer, a matrix region (an n-type conductive layer and matrix layers) is formed on a growth underlying layer of AlN whose abundance ratio of Al is higher (or whose lattice constant is smaller) than that in the matrix region by an MBE technique, thereby to realize conditions where compression stress is caused in an in-plane direction perpendicular to the direction of growth of the matrix region, and then to form island crystals by self-organization in the presence of this compression stress. The compression stress inhibits an increase in lattice constant caused by the reduced abundance ratio of Al in the matrix region, i.e., to compensate for a difference in lattice constant between the island crystals and the matrix region. The compression stress functions to enlarge compositional limits for formation of the island crystals by self-organization to the Ga-rich side.

Abstract: The invention relates to a process for protecting the surface of an SiC substrate. This process comprises deposition of a temporary protection layer with a thickness equal to at least two monolayers on the surface of the substrate to be protected, the protection layer being composed of gallium nitride. Advantageously, the protection layer of gallium nitride may be obtained by depositing gallium on the surface of the substrate, followed by nitridation of the gallium layer formed. The invention also relates to an “epiready” substrate. This substrate comprises an SiC substrate for which at least one surface is covered by a temporary protection layer, the said layer being composed of GaN and being two monolayers thick.

Abstract: A group III nitride underlayer including at least Al, having a dislocation density of ?1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ?200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ?50% and in which a carrier density is ?1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ?50%.

Abstract: The invention relates to a process for protecting the surface of an SiC substrate. This process comprises deposition of a temporary protection layer with a thickness equal to at least two monolayers on the surface of the substrate to be protected, the protection layer being composed of gallium nitride. Advantageously, the protection layer of gallium nitride may be obtained by depositing gallium on the surface of the substrate, followed by nitridation of the gallium layer formed. The invention also relates to an “epiready” substrate. This substrate comprises an SiC substrate for which at least one surface is covered by a temporary protection layer, the said layer being composed of GaN and being two monolayers thick.

Abstract: A group III nitride underlayer including at least Al, having a dislocation density of ?1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ?200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ?50% and in which a carrier density is ?1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ?50%.

Abstract: A group III nitride underlayer including at least Al, having a dislocation density of ?1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ?200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ?50% and in which a carrier density is ?1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ?50%.

Abstract: A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.