Abstract: The container for containing a product, typically cosmetic, has an internal receptacle mounted in an external covering receptacle, by using an adapter insert. The receptacles are made of glass and an attachment region is provided internally on the internal receptacle, near its annular upper end, in order to secure the latter to the insert. The insert is provided with an insertion portion received internally within the external receptacle, a first locking unit and second locking unit. The first locking unit, formed in an elastically deformable portion separated from the rest of the insertion portion by slots are opposing the rotation of the insert around the internal receptacle, while the second locking unit is opposing the rotation of the external receptacle around the insert by engaging on a neck of the external receptacle.

Abstract: An apparatus for irradiating semiconductor material is disclosed having, a laser generating a primary laser beam, an optical system and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams. Wherein the shape and/or size of the individual apertures corresponds to that of a common region of a semiconductor material layer to be irradiated. The optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the use of such an apparatus in semiconductor device manufacturing is disclosed.

Abstract: A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size.

Abstract: An apparatus for irradiating a semiconductor is disclosed. The apparatus has a curved mirror with a reflective surface of revolution, and a point source generating an irradiation beam being incident on the curved mirror along an incident direction. The curved mirror and the point source form a system having an axis of revolution wherein the point source is provided on or near said axis of revolution. The axis of revolution substantially coincides with a straight line projection to be generated on a semiconductor substrate. Additionally, the use of such an apparatus for manufacturing a selective emitter grid, or for irradiating a large area semiconductor surface in a scanning movement, is disclosed.

Abstract: An apparatus for irradiating a semiconductor is disclosed. The apparatus has a curved mirror with a reflective surface of revolution, and a point source generating an irradiation beam being incident on the curved mirror along an incident direction. The curved mirror and the point source form a system having an axis of revolution wherein the point source is provided on or near said axis of revolution. The axis of revolution substantially coincides with a straight line projection to be generated on a semiconductor substrate. Additionally, the use of such an apparatus for manufacturing a selective emitter grid, or for irradiating a large area semiconductor surface in a scanning movement, is disclosed.

Abstract: An apparatus for irradiating semiconductor material is disclosed having, a laser generating a primary laser beam, an optical system and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams. Wherein the shape and/or size of the individual apertures corresponds to that of a common region of a semiconductor material layer to be irradiated. The optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the use of such an apparatus in semiconductor device manufacturing is disclosed.

Abstract: A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size.

Abstract: An optical device for homogenizing a laser beam includes a plurality of abutting front lenses (LF.sub.nm) for dividing the laser beam to be homogenized into m.times.n laser beams, each having a substantially uniform cross section, and a substantially homogeneous energy distribution; a first intermediate plane (PI1) located in the focal plane of the front lenses (LF.sub.mn) and having a plurality of entrance pupils (PE.sub.ij) each of which is arranged at the focus of a front lens (LF.sub.mn) selected among said plurality of front lenses (LF.sub.mn); a second intermediate plane (PI2) having a plurality of exit pupils (PS.sub.ij), a collection lens (LC) capable of collecting the beams from the plurality of exit pupils (PS.sub.ij); and optical transmission means for individually transmitting the light beams from the plurality of entrance pupils (PS.sub.ij) to the plurality of exit pupils (PS.sub.kj).

Abstract: A laser source has two or more laser units and coupling means for coupling the laser beams from each unit so as to deliver a resulting beam for treating a surface. Concurrently with the laser surface treatment, the characteristics of the laser beam from each unit are adjusted to produce a resulting laser beam with a time profile of energy optimally adapted to said laser surface treatment. Homogenizing means homogenize the energy distribution of the resulting laser beam, so that the energy and spatial distribution of said resulting laser beam are concurrently adapted for the selected surface treatment.

Abstract: An optical device for homogenizing a laser beam is described. Such a device is commonly used in the surface treatment of an object. The device consists of front lenses that are bonded together to form an assembly of lenses that breaks the laser light into multiple beams. This results in the homogenization of the gaussian profile of the beam intensity as viewed perpendicular to the beam's propagation. Advantageously the matrix of lenses is formed using groves or bevels in a manner that minimizes losses resulting from light impinging on glue disposed upon the entire lateral surface of the front lenses. In the invention gaps between front lenses that cause interference with the light path are eliminated. This gap free bonding is accomplished by filling the groves or bevels with glue, inserting a rod or wire into the grove to assemble the front lenses in a support frame, bonding a grill to assembled front lenses, or by using a combination of gluing with a support frame.

Abstract: A laser diode (4) emits a beam which is reflected by a plane mirror (12) and by a spherical focusing mirror (2) in order to form a beam (40) which is focused on a read window which is a segment of a read line (6). Said line extends transversely relative to a film (16) running over a drum (20) which rotates about an axis (22). The window occupies the width of the soundtrack on the film. The light passing through said soundtrack is received by a photo cell (34) which provides the sound signal. The invention is particularly applicable to sound motion pictures.

Abstract: A device for producing an electric discharge in a flat-plate transmission line.The device includes at least a first electrode (8), a second electrode (9) opposite the first electrode and passing through a hole (5) in the transmission line (1). With this arrangement it is possible to avoid deposits of metal particles building up on the edges of the hole and eventually shorting together opposite sides of the transmission line.Such flat-plate transmission lines are used in particular in nitrogen laser generators.

Abstract: A gas laser device includes, in succession along an optical axis, a gas laser excited by a travelling wave, a convergent lens, two parallel-sided optical prisms adhering to one another in a symmetrical position in relation to the axis, and another convergent lens. The arrangement is such that two divergent elementary beams produced by the laser are brought together to have substantially less divergence.

Abstract: The invention concerns a travelling wave laser and has application to the reduction of the divergence of laser beams. The electrodes between which the travelling electric discharge for the excitation of the amplifier gas takes place have a cross-section in the shape of two polished rounded-off points facing each other, so as to prevent spurious reflections of light towards the discharge zone and to reduce the divergence of the output beam which is converged by means of a simple optical system.

Abstract: The invention relates to a gas laser generator. This generator comprises two flat energization lines having the shape of arcs of a half parabola, these lines being in electrical continuity along a common segment connecting the merged focusses of the half parabola arcs and a joint situated near the apexes of the half parabola arcs. Application to nitrogen laser generators.

Abstract: Gas laser generator comprising a gaseous active medium, at least one electric excitation line formed by an insulating plate inserted between a first and second metallic plate, the first plate having a slot enclosing the gaseous medium, a circuit for setting up a progressive current wave in the line. The plates are cut in the shape of superimposed half parabolas. A variant consists in producing the generator in the form of two half parabolas such as above but insulated from each other and brought to different potentials. The invention is implemented in high-power lasers.

Abstract: Gas laser comprising a flat electric energizing line consisting of an insulating layer inserted between two metallic layers brought to different potentials, one of whose edges is cut out in the shape of a parabola, one slot being provided in one of the layers, an active gaseous medium flowing in the slot, a circuit for setting up a substantially punctiform discharge between the metallic layers at the level of the focus of the parabolas. The electric line is arranged on a massive plate comprising on the one hand a cut provided in its lower face substantially opposite the slot and communicating with the latter and on the other hand two grooves provided on its upper face each having fitted in it a flexible seal and arranged opposite the walls of the slot.