Patents by Inventor Bruno Lessard

Bruno Lessard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming spacers in CMOS devices
    Patent number: 6573133
    Abstract: A sidewall spacer is formed in a CMOS device by depositing a layer of silicon nitride on a wafer and anisotropically etching away the silicon nitride layer with a chorine-based plasma etchant.
    Type: Grant
    Filed: May 4, 2001
    Date of Patent: June 3, 2003
    Assignee: Dalsa Semiconductor Inc.
    Inventors: Marc Roy, Manon Daigle, Bruno Lessard, Ginette Couture
  • Method of forming spacers in CMOS devices
    Publication number: 20020020884
    Abstract: A sidewall spacer is formed in a CMOS device by depositing a layer of silicon nitride on a wafer and anisotropically etching away the silicon nitride layer with a chorine-based plasma etchant.
    Type: Application
    Filed: May 4, 2001
    Publication date: February 21, 2002
    Inventors: Marc Roy, Manon Daigle, Bruno Lessard, Ginette Couture