Abstract: A method for packing polycrystalline silicon in the form of fragments or round rods, wherein at least one film in each case is inserted into a cuboidal cardboard box matched to the dimensions of the polycrystalline silicon to be packed, the polycrystalline silicon is introduced into the at least one film, the at least one film of thickness 10 to 1000 ?m subsequently being welded and enclosing the polycrystalline silicon, and this at least one film being surrounded by a further film having a reinforcing structure or by a shaping element.

Abstract: Puncturing of plastic bags containing polysilicon chunks during transport thereof and reduction of fines generation are minimized by use of a transport vessel containing at least two plastic bags containing polysilicon chunks with a packing density of greater than or equal to 500 kg/m3.

Abstract: The present invention relates to a method for packing polysilicon in the form of chunks by introducing the chunks into a first plastic bag, the first plastic bag being introduced into a second plastic bag after the introduction of the chunks, or the first plastic bag already having been inserted into the second plastic bag prior to the introduction of the chunks into the first plastic bag, as a result of which the chunks are present in a double bag which is sealed, wherein the air present in the two plastic bags in the double bag after the introduction of the chunks is removed before the sealing of the double bag such that the total volume of the double bag relative to the volume of the chunks is 2.4 to 3.0.

Abstract: Puncturing of plastic bags containing polysilicon chunks during transport thereof and reduction of fines generation are minimized by use of a transport vessel containing at least two plastic bags containing polysilicon chunks with a packing density of greater than or equal to 500 kg/m3.

Abstract: Disclosed is a method for dosing and packaging polysilicon chunks, wherein a product flow of polysilicon chunks is transported via a feed channel, separated by at least one screen into coarse and fine chunks, weighed and dosed to a target weight by a dosing balance, discharged via a discharge channel and transported to a packaging unit where a first plastic bag is filled with the polysilicon chunks and sealed, the plastic bag containing polysilicon chunks being packaged with a further plastic bag which is formed by a shaper and subsequently welded, wherein the at least one screen and the dosing balance at least partially include a hard metal on their surfaces and the shaper for forming the plastic bag includes a wear-resistant coating. Also disclosed are a dosing unit, a packaging unit and a device for dosing and packaging polysilicon chunks, which contains a dosing unit and a packaging unit.

Abstract: An automated filling system for introducing crushed polysilicon fragments into shipping bags without significant contamination positions a freely suspended energy absorber into a freely suspended bag of non-contaminating material prior to filling, and following filling, the energy absorber is removed, and the bag is sealed. The system can replace manual packaging which has been required for semiconductor applications.

Abstract: The present invention relates to a method for packing polysilicon in the form of chunks by introducing the chunks into a first plastic bag, the first plastic bag being introduced into a second plastic bag after the introduction of the chunks, or the first plastic bag already having been inserted into the second plastic bag prior to the introduction of the chunks into the first plastic bag, as a result of which the chunks are present in a double bag which is sealed, wherein the air present in the two plastic bags in the double bag after the introduction of the chunks is removed before the sealing of the double bag such that the total volume of the double bag relative to the volume of the chunks is 2.4 to 3.0.

Abstract: A method for packing polycrystalline silicon in the form of fragments or round rods, wherein at least one film in each case is inserted into a cuboidal cardboard box matched to the dimensions of the polycrystalline silicon to be packed, the polycrystalline silicon is introduced into the at least one film, the at least one film of thickness 10 to 1000 ?m subsequently being welded and enclosing the polycrystalline silicon, and this at least one film being surrounded by a further film having a reinforcing structure or by a shaping element.

Abstract: Disclosed is a method for dosing and packaging polysilicon chunks, wherein a product flow of polysilicon chunks is transported via a feed channel, separated by at least one screen into coarse and fine chunks, weighed and dosed to a target weight by a dosing balance, discharged via a discharge channel and transported to a packaging unit where a first plastic bag is filled with the polysilicon chunks and sealed, the plastic bag containing polysilicon chunks being packaged with a further plastic bag which is formed by a shaper and subsequently welded, wherein the at least one screen and the dosing balance at least partially include a hard metal on their surfaces and the shaper for forming the plastic bag includes a wear-resistant coating. Also disclosed are a dosing unit, a packaging unit and a device for dosing and packaging polysilicon chunks, which contains a dosing unit and a packaging unit.

Abstract: A method for producing thin silicon rods includes: a) providing a rod of silicon; b) sequentially cutting with a sawing device slabs from the rod, wherein the rod is respectively rotated axially through 90° or 180° between two successive cuts so that two of four successive cuts respectively take place pairwise on radially opposite sides of the rod or wherein slab cutting takes place simultaneously together at radially opposite sides of the rod; and c) sawing the cut slabs into thin rods having a rectangular cross section. A device for producing thin rods from a silicon rod by sawing, contains a first unit with cutting tools and a cutting tool cooling liquid, a second unit having nozzles for introducing additional cooling liquid into cutting kerfs of the workpiece, and a third unit having a band saw, a wire saw or cutting tools containing one or more shafts.

Abstract: An automated filling system for introducing crushed polysilicon fragments into shipping bags without significant contamination positions a freely suspended energy absorber into a freely suspended bag of non-contaminating material prior to filling, and following filling, the energy absorber is removed, and the bag is sealed. The system can replace manual packaging which has been required for semiconductor applications.

Abstract: Noncontaminating and nondestructive testing of a shaped polysilicon body for a material defect is accomplished by exposing the shaped polysilicon body to ultrasound waves, and the ultrasound waves are registered by an ultrasound receiver after they have passed through the shaped polysilicon body or reflected therein, so that material defects in the polysilicon are detected.

Abstract: Noncontaminating and nondestructive testing of a shaped polysilicon body for a material defect is accomplished by exposing the shaped polysilicon body to ultrasound waves, and the ultrasound waves are registered by an ultrasound receiver after they have passed through the shaped polysilicon body or reflected therein, so that material defects in the polysilicon are detected.

Abstract: A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO2 constituents, an amount of silicon removed during the polishing on a first polishing plate being significantly higher than on a second polishing plate, with the overall amount of silicon removed not exceeding 1.5 &mgr;m. A polishing abrasive (1a), then a mixture of a polishing abrasive (1b) and at least one alcohol, and finally ultrapure water (1c) are added to the first polishing plate, and a mixture of a polishing abrasive (2a) and at least one alcohol and then ultrapure water (2b) are added to the second plate.

Abstract: A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO2 constituents, an amount of silicon removed during the polishing on a first polishing plate being significantly higher than on a second polishing plate, with the overall amount of silicon removed not exceeding 1.5 &mgr;m. A polishing abrasive (1a), then a mixture of a polishing abrasive (1b) and at least one alcohol, and finally ultrapure water (1c) are added to the first polishing plate, and a mixture of a polishing abrasive (2a) and at least one alcohol and then ultrapure water (2b) are added to the second plate.