Abstract: A high power resistor is formed of a wafer of silicon captured between two molybdenum electrodes. A P-I-N diode of ring shape or wafer shape is concentric with a silicon resistor and has surfaces which are coplanar with the silicon resistor to form a device having an integrated diode and resistor.

Abstract: The gate lead for a center gate thyristor consists of a contact disk connected to the end of an elongated flexible conductive lead wire which is insulated over its major length. The lead is threaded through the central opening in a plunger which is received in a central opening in the pole piece and terminates in a contact disk which is captured against the bottom of the plunger. A compression spring is captured between the other end of the cylinder and the plunger, thereby to press the contact disk into high pressure contact with the gate electrode on the junction when the device is assembled. The opposite end of the gate lead wire is connected to a terminal which can be easily connected to the interior end of the gate pin which extends through the insulation housing of the assembly.