Patents by Inventor Bruno Rauber

Bruno Rauber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photodetector on silicon-on-insulator
    Patent number: 9997550
    Abstract: A photodetector is formed in a silicon-on-insulator (SOI) type semiconductor layer. The photodetector includes a first region and a second region of a first conductivity type separated from each other by a central region of a second conductivity type so as to define a phototransistor. A transverse surface of the semiconductor layer is configured to receive an illumination. The transverse surface extends orthogonally to an upper surface of the central region.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: June 12, 2018
    Assignee: STMICROELECTRONICS SA
    Inventor: Bruno Rauber
  • PHOTODETECTOR ON SILICON-ON-INSULATOR
    Publication number: 20150249179
    Abstract: A photodetector is formed in a silicon-on-insulator (SOI) type semiconductor layer. The photodetector includes a first region and a second region of a first conductivity type separated from each other by a central region of a second conductivity type so as to define a phototransistor. A transverse surface of the semiconductor layer is configured to receive an illumination. The transverse surface extends orthogonally to an upper surface of the central region.
    Type: Application
    Filed: February 20, 2015
    Publication date: September 3, 2015
    Applicant: STMICROELECTRONICS SA
    Inventor: Bruno Rauber
  • Method of simultaneously making a pair of transistors with insulated gates having respectively a thin oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistors
    Patent number: 7015105
    Abstract: A method of simultaneously fabricating a pair of insulated gate transistors respectively having a thin oxide and a thick oxide, and an integrated circuit including a pair of transistors of this kind. Forming low-doped NLDD areas of the thin oxide second transistor includes implanting a first dopant having a first concentration and implanting a second dopant having a second concentration lower than the first concentration. Forming low-doped areas NLDD of the first, thick oxide transistor includes only said implantation of the second dopant.
    Type: Grant
    Filed: October 26, 2001
    Date of Patent: March 21, 2006
    Assignee: STMicroelectronics, S.A.
    Inventors: Laurence Boissonnet, Dominique Golanski, Bruno Rauber, Andre Granier
  • Method of simultaneously making a pair of transistors with insulated grids having respectively a fine oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistors
    Publication number: 20030155618
    Abstract: Forming low-doped NLDD areas 17, 61 of the thin oxide second transistor T2 includes implanting a first dopant 16 having a first concentration and implanting a second dopant 22 having a second concentration lower than the first concentration. Forming low-doped areas NLDD 61 of the first, thick oxide transistor T1 includes only said implantation of the second dopant 22.
    Type: Application
    Filed: June 27, 2002
    Publication date: August 21, 2003
    Inventors: Laurence Boissonnet, Dominique Golanski, Bruno Rauber, Andre Granier