Abstract: RF commutator including: a phase change material (7) arranged between a first conducting element (2) and a second conducting element (4), means of heating (11, 13) the phase change material provided with a first electrode (11) and a second electrode (13), the means of heating being capable of modifying the state of the phase change material (7) by injection of an electrical activation signal between the first electrode and the second electrode, at least one given electrode (11, 13) among the first electrode (11) and second electrode (13) comprising a conducting part (15a) arranged between the first conducting element (2) and the second conducting element (4), zones of the phase change material being laid out between the first conducting element (2) and the second conducting element (4) and being arranged on either side of this conducting part (15a).

Abstract: Method for making a cavity, comprising steps to: make a hole in a cover covering a sacrificial portion on a substrate; make a first layer on the cover, either in a first configuration covering a first region of the cover around the hole, or in a second configuration surrounding a first region of the cover around the hole; deposit a second layer covering the cover and the first layer and with, in a first configuration a low adhesion force between the first and second layers, or in a second configuration a low adhesion force between the second layer and the first region; etch the second layer, forming a flap of which a first part does not hermetically close or seal the hole, and of which a second end is fixed to a second region of the cover; etch the sacrificial portion; close the cavity.

Abstract: An inductance device includes a coil provided with at least one electrically conductive turn having a first portion of turn formed on a face of a first substrate, and a second portion of turn. A first end of the first portion is electrically connected to a first end of the second portion by a conductive connection, and the coil has a longitudinal axis, around which the at least one turn is formed, which is perpendicular to a dimension in thickness of the first substrate. The second portion is formed on a face of a second substrate different from the first substrate, with the face of the first substrate facing the face of the second substrate, with the conductive connection extending into an interstitial space located between the face of the first substrate and the face of the second substrate.

Abstract: The present invention concerns a microelectronic package (1) comprising a microelectronic structure (2) having at least a first opening (3) and defining a first cavity (4), a capping layer (9) having at least a second opening (10) and defining a second cavity (11) which is connected to the first cavity (4), wherein the capping layer (9) is arranged over the microelectronic structure (2) such that the second opening (10) is arranged over the first opening (3), and a sealing layer (13) covering the second opening (10), thereby sealing the first cavity (4) and the second cavity (11). Moreover, the present invention concerns a method of manufacturing the microelectronic package (1).

Abstract: A packaging structure including at least one hermetically sealed cavity in which at least one microelectronic device is arranged, the cavity being formed between a substrate and at least one cap layer through which several release holes are formed; several separated portions of metallic material such that each of the separated portions of metallic material is arranged on the cap layer above and around one of the release holes and forms an individual and hermetical plug of said one of the release holes; at least one diffusion barrier layer comprising at least one non-metallic material, arranged on the cap layer and forming a diffusion barrier against an atmosphere outside the cavity at least around the release holes; and wherein parts of the diffusion barrier layer are not covered by the portions of metallic material.

Abstract: Unit cell including a receive antenna, a transmit antenna, and including first and second radiation surfaces separated from each other by a separation area, a phase-shift circuit comprising switches, each having an on, respectively off, state, wherein the corresponding switch allows, respectively blocks, the flowing of a current between the first and second radiation surfaces; a ground plane; a first printed circuit board including a first surface provided with the receive antenna, and a second opposite surface provided with the ground plane; a wafer of a semiconductor material including a first surface provide with first and second radiation surfaces and wherein the switches are formed in the separation area, monolithically with the transmit antenna.

Abstract: A method for packaging a microelectronic device in an hermetically sealed cavity and managing an atmosphere of the cavity with a dedicated hole, including making said cavity between a support and a cap layer such that a sacrificial material and the device are arranged in the cavity; removing the sacrificial material through at least one release hole, and hermetically sealing the release hole; making a portion of wettable material on the cap layer, around a blind hole or a part of said outside surface corresponding to a location of said dedicated hole; making a portion of fuse material on the portion of wettable material; making the dedicated hole by etching the cap layer; and reflowing the portion of fuse material with a controlled atmosphere, forming a bump of fuse material which hermetically plugs said dedicated hole.

Abstract: The invention relates to a variable-capacitance electrical capacitor comprising a first electrode and a second electrode facing the first electrode and a zone of a dielectric material arranged between said first and second electrodes characterized in that the second electrode is formed at least on one hand of a primary electrode made of an electrically conductive material and, at least on the other, of an additional electrode comprising a state-change material, the primary electrode and the additional electrode facing the first electrode, said state-change material being arranged at least partially in contact with the primary electrode and configured to alternatively adopt a high-resistivity state wherein the additional electrode is electrically insulated from the primary electrode and a low-resistivity state wherein the additional electrode is in electrical conduction with the primary electrode so as to vary the electrically active surface area of the second electrode.

Abstract: Method of hermetically sealing a hole with a fuse material, comprising the following steps: applying a portion of wettable material onto a surface such that it completely surrounds the hole made through said surface and is located outside the hole, or completely surrounds a first part of said surface corresponding to a location of the hole; applying a portion of fuse material on the portion of wettable material and on a second part of said surface located around the portion of wettable material; reflowing the portion of fuse material to form a bump of fuse material which has a shape corresponding to a part of a sphere, which is fastened only to the portion of wettable material and which hermetically plugs the hole; wherein the hole is made in said surface before reflowing the portion of fuse material.

Abstract: Method of hermetically sealing a hole with a fuse material, comprising the following steps: applying a portion of wettable material onto a surface such that it completely surrounds the hole made through said surface and is located outside the hole, or completely surrounds a first part of said surface corresponding to a location of the hole; applying a portion of fuse material on the portion of wettable material and on a second part of said surface located around the portion of wettable material; reflowing the portion of fuse material to form a bump of fuse material which has a shape corresponding to a part of a sphere, which is fastened only to the portion of wettable material and which hermetically plugs the hole; wherein the hole is made in said surface before reflowing the portion of fuse material.

Abstract: The fabrication of a semiconductor fixed structure defining a volume, for example of a MEMS micro electro-mechanical system includes, determining thicknesses beforehand depending on the functional distances associated with elements. At least one element is formed on a substrate by thermal oxidation of the substrate so as to form an oxide layer followed by selective etching of the oxide layer so as to define the volume in an etched portion by baring the underlying substrate so as to define the element in an unetched portion, and later oxidation of the substrate so as to form an oxide layer, in order to obtain the elements at the functional distances.

Abstract: The fabrication of a semiconductor fixed structure defining a volume, for example of a MEMS micro electro-mechanical system includes, determining thicknesses beforehand depending on the functional distances associated with elements. At least one element is formed on a substrate by thermal oxidation of the substrate so as to form an oxide layer followed by selective etching of the oxide layer so as to define the volume in an etched portion by baring the underlying substrate so as to define the element in an unetched portion, and later oxidation of the substrate so as to form an oxide layer, in order to obtain the elements at the functional distances.

Abstract: This production process is designed to produce a chromium layer (4) making it possible as it were for the material of the connection bump (8) to remain in a region perfectly bounded by the chromium layer (4).