Patents by Inventor Bruno Remiat

Bruno Remiat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8815108
    Abstract: A method of depositing a non-continuous coating of a first material on a substrate, comprising: a) the formation of a mask on this substrate, by forming at least two mask layers, and etching of at least one cavity in these layers, this cavity having an outline such that a coating, deposited on the substrate, through the cavities of the mask, has at least one discontinuity over said outline of the cavity; b) the deposition of the first material on the substrate, through the cavities of the mask, the coating thus deposited having at least one discontinuity over the outline of said cavity; and c) the mask is removed.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: August 26, 2014
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Bruno Remiat, Laurent Vandroux, Florent Souche
  • Patent number: 8525020
    Abstract: A photovoltaic cell including at least: a closed chamber including two end walls arranged opposite one another, with at least one being intended to receive incident light radiation, and including at least one side wall formed by at least one stack of a first electrode and a second electrode electrically insulated from one another, the first electrode and second electrode each having an annular shape each being disposed at a periphery of a respective one of the two end walls; at least two non-miscible electrolytes placed in the closed chamber, forming two superimposed layers of which one is in contact with the first electrode and the other is in contact with the second electrode; and a photoactive layer, placed in the closed chamber, that achieves a photovoltaic conversion of energy of the incident light radiation.
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: September 3, 2013
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Florence Fusalba, Bruno Remiat
  • Patent number: 7972894
    Abstract: A method of producing a photovoltaic cell. A passivation layer based on an intrinsic amorphous semiconductor is deposited on a back surface of a substrate based on a crystalline semiconductor. A first sacrificial mask including at least one through-opening on the passivation layer is screen-printed at a temperature less than or equal to 250° C. A doped amorphous semiconductor layer of a first type of conductivity is deposited at least in the opening. The first sacrificial mask is removed, leaving at least one doped amorphous semiconductor pad of the first type of conductivity remaining at the opening of the first sacrificial mask.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: July 5, 2011
    Assignee: Commissariat A l'Energie Atomique
    Inventors: Yannick Veschetti, Bruno Remiat
  • Publication number: 20100258524
    Abstract: A method of depositing a non-continuous coating of a first material on a substrate, comprising: a) the formation of a mask on this substrate, by forming at least two mask layers, and etching of at least one cavity in these layers, this cavity having an outline such that a coating, deposited on the substrate, through the cavities of the mask, has at least one discontinuity over said outline of the cavity; b) the deposition of the first material on the substrate, through the cavities of the mask, the coating thus deposited having at least one discontinuity over the outline of said cavity; and c) the mask is removed.
    Type: Application
    Filed: April 3, 2008
    Publication date: October 14, 2010
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Bruno Remiat, Laurent Vandroux, Florent Souche
  • Publication number: 20100087031
    Abstract: The invention relates to a method of producing a photovoltaic cell (100), comprising at least the steps of: a) deposition of a passivation layer (12) based on an intrinsic amorphous semiconductor on a back surface of a substrate (2) based on a crystalline semiconductor, b) screen-printing of a first sacrificial mask comprising at least one through-opening on the passivation layer, at a temperature less than or equal to 250° C., c) deposition of a doped amorphous semiconductor layer (20) of a first type of conductivity at least in the opening, d) removal of the first sacrificial mask, leaving at least one doped amorphous semiconductor pad (20) of the first type of conductivity remaining at the opening of the first sacrificial mask.
    Type: Application
    Filed: September 21, 2007
    Publication date: April 8, 2010
    Applicant: Commissariat a L'Energie Atomique
    Inventors: Yannick Veschetti, Bruno Remiat
  • Publication number: 20090050197
    Abstract: Photovoltaic cell comprising at least: a closed chamber including two end walls arranged opposite one another, with at least one being intended to receive incident light radiation, and including at least one side wall formed by at least one stack of a first electrode and a second electrode electrically insulated from one another; at least two non-miscible electrolytes placed in the closed chamber, forming two superimposed layers of which one is in contact with the first electrode and the other is in contact with the second electrode; means, placed in the closed chamber, capable of achieving a photovoltaic conversion of the energy of the light radiation received.
    Type: Application
    Filed: August 6, 2008
    Publication date: February 26, 2009
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Florence Fusalba, Bruno Remiat