Patents by Inventor Bryan A. Gallagher

Bryan A. Gallagher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9093163
    Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.
    Type: Grant
    Filed: January 14, 2010
    Date of Patent: July 28, 2015
    Assignees: HITACHI, LTD., UNIVERSITE PARIS SUD XI, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Joerg Wunderlich, Jan Zemen, Claude Chappert, Bryan Gallagher, Thibaut Devolder, David Williams
  • Patent number: 8138758
    Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.
    Type: Grant
    Filed: March 18, 2008
    Date of Patent: March 20, 2012
    Assignees: Hitachi, Ltd., Universite Paris Sud XI, Centre National de la Recherche Scientifique
    Inventors: Joerg Wunderlich, Tomas Jungwirth, Jan Zemen, Bryan Gallagher, Claude Chappert, Thibaut Devolder
  • Publication number: 20110170339
    Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.
    Type: Application
    Filed: January 14, 2010
    Publication date: July 14, 2011
    Inventors: Joerg Wunderlich, Jan Zemen, Claude Chappert, Bryan Gallagher, Thibaut Devolder, David Williams
  • Publication number: 20110103138
    Abstract: A single-electron transistor (1) has an elongate conductive channel (2) and a side gate (3) formed in a 5 nm-thick layer (4) of Ga0.98Mn0.02As. The single-electron transistor (1) is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.
    Type: Application
    Filed: November 16, 2010
    Publication date: May 5, 2011
    Inventors: Jörg WUNDERLICH, David Williams, Thomas Jungwirth, Andrew Irvine, Bryan Gallagher
  • Patent number: 7893426
    Abstract: A single-electron transistor (1) has an elongate conductive channel (2) and a side gate (3) formed in a 5 nm-thick layer (4) of Ga0.98Mn0.02As. The single-electron transistor (1) is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.
    Type: Grant
    Filed: August 9, 2006
    Date of Patent: February 22, 2011
    Assignee: Hitachi Limited
    Inventors: Jörg Wunderlich, David Williams, Tomas Jungwirth, Andrew Irvine, Bryan Gallagher
  • Publication number: 20090016098
    Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.
    Type: Application
    Filed: March 18, 2008
    Publication date: January 15, 2009
    Inventors: Joerg Wunderlich, Tomas Jungwirth, Jan Zemen, Bryan Gallagher, Claude Chappert, Thibaut Devolder
  • Publication number: 20070200156
    Abstract: A single-electron transistor (1) has an elongate conductive channel (2) and a side gate (3) formed in a 5 nm-thick layer (4) of Ga0.98Mn0.02As. The single-electron transistor (1) is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.
    Type: Application
    Filed: August 9, 2006
    Publication date: August 30, 2007
    Inventors: Jorg Wunderlich, David Williams, Tomas Jungwirth, Andrew Irvine, Bryan Gallagher
  • Publication number: 20060246978
    Abstract: Various embodiments of a method for playing a card game in association with a poker-style card game are disclosed. The method may include playing the poker-style card game to a normal ending point; permitting placement of a supplemental bet in association with the poker-style card game; dealing at least one additional card at a normal ending point of the poker-style card game in response to placement of the supplemental bet; and, factoring the additional card into the outcome of the poker-style card game.
    Type: Application
    Filed: May 2, 2005
    Publication date: November 2, 2006
    Inventor: Bryan Gallagher
  • Patent number: D503846
    Type: Grant
    Filed: May 21, 2004
    Date of Patent: April 12, 2005
    Inventors: Bryan A. Gallagher, Zachary Jacob Gieszler