Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

Abstract: Components comprising multilayer coatings for reducing surface metals and related methods of producing multilayer coatings are disclosed. A coating comprises an oxide layer and an aluminum oxide layer. The aluminum oxide layer is different than the oxide layer. The oxide layer is located between a component and the aluminum oxide layer. When measured using Secondary Ion Mass Spectrometry (SIMS), the oxide layer and the aluminum oxide layer reduce a concentration of an impurity in the aluminum oxide layer by at least 10% compared to a control coating without the oxide layer.

Abstract: Metal carbide films and related devices and related methods are provided herein. A device comprises a substrate and a metal carbide film located on the substrate. The metal carbide film comprises at least one of a molybdenum, a tungsten, or any combination thereof. The metal carbide film comprises a residual chlorine component. The metal carbide film has a carbon content of at least 10% based on a total composition of the metal carbide film.

Abstract: Devices systems for the advanced purification of precursor material and related methods are provided. A vessel assembly comprises a vessel. The vessel is configured to contain a precursor material. The precursor material comprises at least one impurity. The vessel assembly comprises a sorbent medium. When the precursor material is vaporized to obtain a vaporized precursor comprising the at least one impurity, the sorbent medium is contained in the vessel in a location that is in a flow path of the vaporized precursor. The sorbent medium is configured to sorb the at least one impurity.

Abstract: A tray assembly comprises a plurality of trays. Each of the plurality of trays comprises a first tray portion and a second tray portion which are couplable together by a retainer and which are engageable with a cam member. Depending on the orientation of the cam member, each of the plurality of trays of the tray assembly is configurable between an expanded configuration and a collapsed configuration. In the collapsed configuration, the tray assembly is insertable into an ampoule. In the expanded configuration, the tray assembly is removable from an ampoule.

Abstract: Methods for synthesizing and/or purifying molybdenum compounds are provided. A method comprises obtaining a reagent; obtaining a metal trioxide compound; and contacting the reagent and the metal trioxide compound sufficient to form a reaction product comprising a molybdenum compound. Related compositions, related systems, and other related methods are provided, among other things.

Abstract: Some embodiments relate to systems and related methods. A system comprises a cabinet. The cabinet comprises a first ampoule. The first ampoule comprises a first precursor material and at least one first impurity. The cabinet comprises a manifold. The manifold is connectable to a tool. The cabinet comprises a first valve. The first valve connects the first ampoule to the manifold. The first valve has not been exposed to an external environment after the first valve has been exposed to the first precursor material.

Abstract: A tray for a vaporization vessel that includes a tray having a side wall, a bottom plate, one or more apertures that extend through the bottom plate, and a duct that extends through and from the bottom plate. The tray configured to support a solid reagent to be vaporized. A method of assembling the tray that includes forming a first tray that has the side wall and the bottom plate. A vaporization vessel that includes one or more of the trays.

Abstract: Some embodiments of the present disclosure relate to a system, comprising a vessel; at least one tray located in the vessel; a tube extending into the vessel to a location beneath the at least one tray; and a level sensor comprising: at least one reed switch located on the tube; and at least one toroidal magnet, wherein the tube extends through an opening defined by the at least one toroidal magnet, such that the at least one toroidal magnet is slidably engaged with the tube; wherein, when a solid precursor is loaded onto the at least one tray, the at least one toroidal magnet is configured to rest on a surface of the solid precursor; wherein the level sensor is configured to sense changes in the location of the at least one toroidal magnet relative to the at least one reed switch to sense precursor levels within the vessel. Also described is a vessel for delivering solid precursor vapor where a sensor or heater is connected through a gas exchange port of the vessel.

Abstract: Described are metal bodies made of magnesium-containing metal and having a magnesium fluoride surface passivation region formed at a surface of the body, as well as methods of forming a magnesium fluoride surface passivation region at a surface of a metal body, and uses for the bodies.

Abstract: Systems for delivering precursors and related methods are provided. A system comprises at least one first container, at least one second container, at least one deposition chamber, a first conduit connecting the at least one first container to the at least one second container, and a second conduit connecting the at least one second container to the at least one deposition chamber. The first conduit is configured for delivering a vaporized precursor, at a first temperature, from the at least one first container to the at least one second container. The second conduit is configured for delivering the vaporized precursor, at a second temperature, from the at least one second container to the at least one deposition chamber. The first temperature is less than the second temperature.

Abstract: Provided is a process for the vapor deposition of molybdenum or tungsten, and the use of molybdenum hexacarbonyl (Mo(CO)6) or tungsten hexacarbonyl (W(CO)6) for such deposition, e.g., in the manufacture of semiconductor devices in which molybdenum-containing or tungsten-containing films are desired. In accordance with one aspect of the invention, molybdenum hexacarbonyl (Mo(CO)6) has been found in vapor deposition processes such as chemical vapor deposition (CVD) to provide low resistivity, high deposition rate films in conjunction with a pulsed deposition process in which a step involving a brief pulse of H2O is utilized. This pulsing with H2O vapor was found to be effective in reducing the carbon content of films produced from Mo(CO)6-based CVD processes.

Abstract: Described are metal bodies made of magnesium-containing metal and having a magnesium fluoride surface passivation region formed at a surface of the body, as well as methods of forming a magnesium fluoride surface passivation region at a surface of a metal body, and uses for the bodies.

Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide.

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, e.g., wherein the metal is molybdenum or tungsten; the methods involve vapor deposition of a metal layer onto a substrate from a metal-containing precursor in the presence of reducing gas (e.g., hydrogen) and a nitrogen-containing reducing compound.

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Abstract: Methods improving metal oxide deposition with nitrogen oxide, related devices, and related systems are provided herein. The method comprises flowing an ozone gas from an ozone generator to a deposition chamber. The method comprises flowing a nitrogen oxide gas from a first source to the deposition chamber. The method comprises flowing a first precursor gas from a second source to the deposition chamber. The method comprises exposing a substrate located in the deposition chamber to at least one of the ozone gas, the nitrogen oxide gas, the first precursor gas, or any combination thereof. The method step of exposing is sufficient to form a film having a step coverage of at least 50%. The substrate has at least one structure with an aspect ratio of at least 10:1.

Abstract: Precursors for selective deposition of silicon-containing films are provided. A precursor comprises a compound of the formula: R(HO)Si(OR1)(OR2), where: R is or comprises an alkyl, an alkenyl, or an alkoxy; and R1 and R2 are independently a hydrogen, an alkoxyl, or R1 and R2 are bonded to form a heterocycle. Devices comprising silicon-containing films are also provided, wherein the silicon-containing film comprises a reaction product of the precursor and another reactive species. Methods of depositing silicon-containing films are also provided, among other things.