Patents by Inventor Bryan C. Hendrix

Bryan C. Hendrix has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250129485
    Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.
    Type: Application
    Filed: June 26, 2024
    Publication date: April 24, 2025
    Inventors: Bryan C. Hendrix, David Peters, Weimin Li, Carlo Waldfried, Richard A. Cooke, Nilesh Gunda, I-Kuan Lin
  • Patent number: 12264392
    Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.
    Type: Grant
    Filed: June 23, 2021
    Date of Patent: April 1, 2025
    Assignee: ENTEGRIS, INC.
    Inventors: Sungsil Cho, DaHye Kim, SooJin Lee, Jae Eon Park, Bryan C. Hendrix, Philip S. H. Chen, Shawn D. Nguyen
  • Patent number: 12252787
    Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.
    Type: Grant
    Filed: August 1, 2023
    Date of Patent: March 18, 2025
    Assignee: ENTEGRIS, INC.
    Inventors: Robert Wright, Jr., Thomas H. Baum, Bryan C. Hendrix, Shawn D. Nguyen, Han Wang, Philip S. H. Chen
  • Publication number: 20250074927
    Abstract: Precursors for selective deposition of silicon-containing films are provided. A precursor comprises a compound of the formula: R(HO)Si(OR1)(OR2), where: R is or comprises an alkyl, an alkenyl, or an alkoxy; and R1 and R2 are independently a hydrogen, an alkoxyl, or R1 and R2 are bonded to form a heterocycle. Devices comprising silicon-containing films are also provided, wherein the silicon-containing film comprises a reaction product of the precursor and another reactive species. Methods of depositing silicon-containing films are also provided, among other things.
    Type: Application
    Filed: August 20, 2024
    Publication date: March 6, 2025
    Inventors: Drew Michael Hood, Thomas M. Cameron, Bryan C. Hendrix
  • Publication number: 20250075314
    Abstract: A device is provided. The device comprises a substrate having at least one structure with an aspect ratio of at least 10:1. The device comprises a film located on the at least one structure with a step coverage of at least 90%. The film comprises a metal oxide or metalloid oxide; and a concentration of less than 1×1020 hydrogen atoms per cubic centimeter as measured by SIMS. Methods for forming films on substrates and related systems and methods are also provided herein.
    Type: Application
    Filed: August 29, 2024
    Publication date: March 6, 2025
    Inventors: Bryan C. Hendrix, Lucas B. Henderson, Eric Condo, Philip S.H. Chen
  • Publication number: 20250079157
    Abstract: Methods improving metal oxide deposition with nitrogen oxide, related devices, and related systems are provided herein. The method comprises flowing an ozone gas from an ozone generator to a deposition chamber. The method comprises flowing a nitrogen oxide gas from a first source to the deposition chamber. The method comprises flowing a first precursor gas from a second source to the deposition chamber. The method comprises exposing a substrate located in the deposition chamber to at least one of the ozone gas, the nitrogen oxide gas, the first precursor gas, or any combination thereof. The method step of exposing is sufficient to form a film having a step coverage of at least 50%. The substrate has at least one structure with an aspect ratio of at least 10:1.
    Type: Application
    Filed: August 29, 2024
    Publication date: March 6, 2025
    Inventors: Rong Zhao, Eric Condo, Bryan C. Hendrix, Lucas B. Henderson, Philip S.H. Chen
  • Patent number: 12237170
    Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C?CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.
    Type: Grant
    Filed: September 28, 2023
    Date of Patent: February 25, 2025
    Assignee: ENTEGRIS, INC.
    Inventors: Sangbum Han, Seobong Chang, Bryan C. Hendrix, Jaeeon Park, Thomas H. Baum
  • Patent number: 12209105
    Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.
    Type: Grant
    Filed: September 1, 2022
    Date of Patent: January 28, 2025
    Assignee: ENTEGRIS, INC.
    Inventors: Philip S. H. Chen, Eric Condo, Bryan C. Hendrix, Thomas H. Baum, David Kuiper
  • Publication number: 20250019822
    Abstract: Metal getters in vaporizers, and related systems and methods, are provided. A vaporizer comprises a vessel having an outlet. The vessel is configured to discharge a metal halide vapor through the outlet. The vaporizer comprises a metal getter located within the vessel between the inlet and the outlet. When an oxygen-containing species is present within the vessel, an impurity content of the metal halide vapor that is discharged from the vessel is less than an impurity content of a precursor vapor that is discharged from a vessel without the metal getter.
    Type: Application
    Filed: July 10, 2024
    Publication date: January 16, 2025
    Inventors: Bryan C. Hendrix, Scott L. Battle, Dalton Vance Locklear
  • Publication number: 20250003072
    Abstract: High purity molybdenum-containing precursors and related systems and methods are provided. A precursor delivery system comprises a vaporizer vessel that is configured to contain a vaporizable precursor that, when vaporized, produces a precursor vapor. The precursor delivery system comprises at least one protective surface treatment. The at least one protective surface treatment covers a sufficient amount of at least one gas-exposed surface of the precursor delivery system to reduce an amount of at least one contaminant in the precursor vapor as compared to a precursor vapor produced by a precursor delivery system without the at least one protective surface treatment.
    Type: Application
    Filed: June 26, 2024
    Publication date: January 2, 2025
    Inventors: Joseph E. Reynolds, III, Michael Watson, Bryan C. Hendrix, Sara Moghaddam, Devon N. Dion, Benjamin R. Garrett, Carlo Waldfried, Virendra Warke
  • Publication number: 20240412981
    Abstract: Selective ruthenium deposition and related systems and methods are provided. A method comprises vaporizing at least a portion of a ruthenium precursor to produce a vaporized ruthenium precursor; contacting a first surface portion and a second surface portion of a substrate with the vaporized ruthenium precursor and at least one reducing gas; and depositing ruthenium on the first surface portion of the substrate with a selectivity of at least 25 ? relative to the second surface portion of the substrate. A device comprises a substrate having a first surface portion and a second surface portion adjacent to the first surface portion; and a ruthenium layer located on the first surface portion of the substrate, wherein the ruthenium layer has a thickness of at least 25 ? on the first surface portion of the substrate; wherein the second surface portion of the substrate does not comprise ruthenium.
    Type: Application
    Filed: June 7, 2024
    Publication date: December 12, 2024
    Inventors: Phil S.H. Chen, Bryan C. Hendrix, Eric Condo
  • Patent number: 12084778
    Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: September 10, 2024
    Assignee: ENTEGRIS, INC.
    Inventors: Bryan C. Hendrix, David W. Peters, Weimin Li, Carlo Waldfried, Richard A. Cooke, Nilesh Gunda, I-Kuan Lin
  • Patent number: 12071688
    Abstract: Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: August 27, 2024
    Assignee: ENTEGRIS, INC.
    Inventors: SangJin Lee, DaHye Kim, Sungsil Cho, Seobong Chang, Jae Eon Park, Bryan C. Hendrix, Thomas H. Baum, SooJin Lee
  • Patent number: 12037681
    Abstract: Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with O2 plasma.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: July 16, 2024
    Assignee: ENTEGRIS, INC.
    Inventors: Sungsil Cho, Seobong Chang, Jae Eon Park, Bryan C. Hendrix, Thomas H. Baum
  • Patent number: 12018382
    Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: June 25, 2024
    Assignee: ENTEGRIS, INC.
    Inventors: Bryan C. Hendrix, David W. Peters, Weimin Li, Carlo Waldfried, Richard A. Cooke, Nilesh Gunda, I-Kuan Lin
  • Patent number: 11987878
    Abstract: Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R1R2Ru(0), wherein R1 is an aryl group-containing ligand, and R2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.
    Type: Grant
    Filed: May 13, 2022
    Date of Patent: May 21, 2024
    Assignee: ENTEGRIS, INC.
    Inventors: Philip S. H. Chen, Bryan C. Hendrix, Thomas H. Baum
  • Publication number: 20240140819
    Abstract: The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.
    Type: Application
    Filed: January 4, 2024
    Publication date: May 2, 2024
    Inventors: David M. Ermert, Robert L. Wright, JR., Thomas H. Baum, Bryan C. Hendrix
  • Patent number: 11965239
    Abstract: Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 ? to about 15 ? and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.
    Type: Grant
    Filed: January 28, 2021
    Date of Patent: April 23, 2024
    Assignee: ENTEGRIS, INC.
    Inventors: Gavin Richards, Thomas H. Baum, Han Wang, Bryan C. Hendrix
  • Publication number: 20240096631
    Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C?CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.
    Type: Application
    Filed: September 28, 2023
    Publication date: March 21, 2024
    Inventors: Sangbum Han, Seobong Chang, Bryan C. Hendrix, Jaeeon Park, Thomas H. Baum
  • Publication number: 20240084452
    Abstract: A tray for a vaporization vessel that includes a tray having a side wall, a bottom plate, one or more apertures that extend through the bottom plate, and a duct that extends through and from the bottom plate. The tray configured to support a solid reagent to be vaporized. A method of assembling the tray that includes forming a first tray that has the side wall and the bottom plate. A vaporization vessel that includes one or more of the trays.
    Type: Application
    Filed: October 13, 2023
    Publication date: March 14, 2024
    Inventors: Bryan C. HENDRIX, Scott L. Battle, David J. Eldridge, John N. Gregg, Jacob Thomas, Manuel F. Gonzales, Kenney R. Jordan, Benjamin H. Olson