Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

Abstract: A gallium- and nitrogen-containing laser device including a facet with surface treatment to improve an optical beam is disclosed.

Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

Abstract: Laser devices formed on a semipolar surface region of a gallium and nitrogen containing material are disclosed. The laser devices have a laser stripe configured to emit a laser beam having a cross-polarized emission state.

Abstract: Laser devices formed on a semipolar surface region of a gallium and nitrogen containing material are disclosed. The laser devices have a laser stripe configured to emit a laser beam having a cross-polarized emission state.

Abstract: Electrical pumping of photonic crystal (PC) nanocavities using a lateral p-i-n junction is described. Ion implantation doping can be used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated in a first experimental device. Electrically pumped lasing is demonstrated in a second experimental device. High speed modulation of a single mode LED is demonstrated in a third experimental device. This approach provides several significant advantages. Ease of fabrication is improved because difficult timed etch steps are not required. Any kind of PC design can be employed. Current flow can be lithographically controlled to focus current flow to the active region of the device, thereby improving efficiency, reducing resistance, improving speed, and reducing threshold.

Abstract: Electrical pumping of photonic crystal (PC) nanocavities using a lateral p-i-n junction is described. Ion implantation doping can be used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated in a first experimental device. Electrically pumped lasing is demonstrated in a second experimental device. This approach provides several significant advantages. Ease of fabrication is improved because difficult timed etch steps are not required. Any kind of PC design can be employed. Current flow can be lithographically controlled to focus current flow to the active region of the device, thereby improving efficiency, reducing resistance, improving speed, and reducing threshold. Insulating substrates can be employed, which facilitates inclusion of these devices in photonic integrated circuits.

Abstract: Electrical pumping of photonic crystal (PC) nanocavities using a lateral p-i-n junction is described. Ion implantation doping can be used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated in a first experimental device. Electrically pumped lasing is demonstrated in a second experimental device. This approach provides several significant advantages. Ease of fabrication is improved because difficult timed etch steps are not required. Any kind of PC design can be employed. Current flow can be lithographically controlled to focus current flow to the active region of the device, thereby improving efficiency, reducing resistance, improving speed, and reducing threshold. Insulating substrates can be employed, which facilitates inclusion of these devices in photonic integrated circuits.

Abstract: A method of strengthening glass using a mixture of a silane and a resin, the mixture being applied to the glass surface as an aqueous emulsion which is then cured. The silane is a reaction product of a silane coupling agent, which contains an epoxy group, with an unsaturated carboxylic acid, and the resin is a resin having at least two polymerisable unsaturated groups in the molecule. Preferably the silane and the resin have unsaturated reactive groups of matched reactivity. Advantageously the mixture contains about 20 parts of the silane per hundred parts of the resin. In another embodiment a silane coupling agent is dissolved in a polymerisable resin, the mixture of silane and resin is emulsified in water, the emulsion being applied as a coating, which is then cured.