Abstract: In one preferred embodiment, a semiconductor photodiode is provided which includes a substrate layer fabricated from a Si32 radioisotope of a first type of conductivity material and a thick-field oxide layer formed on the substrate layer. The oxide layer has a selectively patterned area to form an open region on the substrate layer. The semiconductor photodiode further includes a dopant material of a second conductivity material, which is different from the first conductivity material. The dopant material is formed within the open region on the substrate layer to form a photodiode junction. The semiconductor photodiode further includes an enclosure package enclosing the semiconductor diode for containing any radiation from the radioisotope.

Abstract: In one preferred embodiment, a semiconductor diode includes a first layer formed with a p-type semiconductor, a second layer formed with an n-type semiconductor, and a third active depletion layer contained between the first and second layers. The third layer is formed with a radioisotope of the p-type and n-type semiconductors (preferably Si 32) such that initial emission of beta particles begins in the active depletion region and substantially all of the emitted beta particles are contained within the first, second and third layers during operation. The p-type and n-type layers each have sufficient depth to contain substantially all of beta particles emitted from the depletion layer. The depth of each of the p-type and n-type layers is substantially equal to or greater than the maximum beta emission depth of the radioisotope.

Abstract: In one preferred embodiment, a semiconductor diode includes a first layer formed with a p-type semiconductor, a second layer formed with an n-type semiconductor, and a third active depletion layer contained between the first and second layers. The third layer is formed with a radioisotope of the p-type and n-type semiconductors (preferably Si 32) such that initial emission of beta particles begins in the active depletion region and substantially all of the emitted beta particles are contained within the first, second and third layers during operation. The p-type and n-type layers each have sufficient depth to contain substantially all of beta particles emitted from the depletion layer. The depth of each of the p-type and n-type layers is substantially equal to or greater than the maximum beta emission depth of the radioisotope.