Patents by Inventor Bryan Hendrix

Bryan Hendrix has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240123391
    Abstract: Tungsten precursors with high purity and methods for purifying tungsten precursors are provided. The method for purifying a precursor may comprise at least one of the following steps: obtaining a source vessel containing WCl4, WOCl4, and one of WCl5 or WCl6; separating the WCl5 or the WCl6 from at least a first portion of the WOCl4; separating the WCl5 or the WCl6 from at least a second portion of the WOCl4; recovering a precursor in a collection vessel; or any combination thereof.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 18, 2024
    Inventors: Robert Wright, JR., Bryan Hendrix, Loren Press, Benjamin Garrett
  • Publication number: 20240116774
    Abstract: A precursor comprises a tungsten precursor and a carbon-containing material. The precursor comprises less than 0.02% by weight of the carbon-containing material based on a total weight of the precursor. A method for purifying a tungsten precursor may comprise at least one of the following steps: obtaining a source vessel containing a tungsten precursor and a carbon-containing material; separating the tungsten precursor from at least a first portion of the carbon-containing material; recovering a precursor in a collection vessel; or any combination thereof.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 11, 2024
    Inventors: Loren Press, Benjamin Garrett, Michael Watson, Scott L. Battle, Thomas M. Cameron, Bryan Hendrix
  • Publication number: 20230130079
    Abstract: A system includes a vaporizer vessel. The vaporizer vessel includes an outlet fluidly connected to the vaporizer vessel. A heater is configured to heat the vaporizer vessel. A valve is configured to regulate a pressure of a vaporized material at the outlet. In response to the pressure at the outlet being outside a set pressure range, the heater is configured to increase or decrease heat to the vaporizer vessel.
    Type: Application
    Filed: October 24, 2022
    Publication date: April 27, 2023
    Inventors: Scott L. Battle, John N. Gregg, Donn K. Naito, Bryan Hendrix
  • Patent number: 11107675
    Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: August 31, 2021
    Assignee: ENTEGRIS, INC.
    Inventors: Thomas H. Baum, Philip S. H. Chen, Robert L. Wright, Bryan Hendrix, Shuang Meng, Richard Assion
  • Publication number: 20180286668
    Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.
    Type: Application
    Filed: April 26, 2018
    Publication date: October 4, 2018
    Inventors: Thomas H. Baum, Philip S.H. Chen, Robert L. Wright, Bryan Hendrix, Shuang Meng, Richard Assion
  • Publication number: 20180019165
    Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.
    Type: Application
    Filed: July 13, 2017
    Publication date: January 18, 2018
    Inventors: Thomas H. Baum, Philip S.H. Chen, Robert Wright, Bryan Hendrix, Shuang Meng, Richard Assion
  • Patent number: 9783558
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: October 10, 2017
    Assignee: Entegris, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
  • Publication number: 20150315215
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: July 14, 2015
    Publication date: November 5, 2015
    Applicant: Entegris, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
  • Patent number: 9102693
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: August 11, 2015
    Assignee: ENTEGRIS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
  • Publication number: 20140329011
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: July 17, 2014
    Publication date: November 6, 2014
    Inventors: Ziyun Wang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
  • Publication number: 20120178267
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: March 19, 2012
    Publication date: July 12, 2012
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan Hendrix, Jeffrey Roeder
  • Publication number: 20110136343
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Application
    Filed: February 15, 2011
    Publication date: June 9, 2011
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan Hendrix, Jeffrey F. Roeder
  • Publication number: 20100314590
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: August 24, 2010
    Publication date: December 16, 2010
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Ziyun WANG, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
  • Publication number: 20100285663
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: July 17, 2010
    Publication date: November 11, 2010
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Ziyun WANG, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan Hendrix, Jeffrey Roeder
  • Publication number: 20100221914
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Application
    Filed: May 11, 2010
    Publication date: September 2, 2010
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan Hendrix, Jeffrey F. Roeder
  • Patent number: 7632042
    Abstract: An alignment device is disclosed use in maintaining the alignment of longitudinal frame members of a trench-forming assembly. The alignment device comprises a cross member. Extending in the same direction from opposite ends of the cross member is at least one pair of first lateral extensions. The pair of lateral extensions is spaced apart so as to contact the respective longitudinal frame members of the trench-forming assembly, and thereby maintain the two frame members at a distance relative to each other. The alignment device may further include at least one interior extension extending from the cross member in the same direction as the pair of first lateral extensions. In this embodiment, the interior extension defines a slot between the interior extension and at least one of the first lateral extensions, where the slot is structured is to receive at least a portion of one of the longitudinal frame members.
    Type: Grant
    Filed: May 29, 2007
    Date of Patent: December 15, 2009
    Assignee: ABT, Inc.
    Inventors: Ralph E. Brafford, Jr., Roger J. Morrow, Timothy H. Wallace, Bryan A. Hendrix
  • Publication number: 20090281344
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Application
    Filed: May 12, 2009
    Publication date: November 12, 2009
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Ziyun Wang, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan Hendrix, Jeffrey Roeder
  • Patent number: 7601860
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: June 17, 2004
    Date of Patent: October 13, 2009
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Bryan Hendrix, Jeffrey Roeder, Tianniu Chen, Thomas H. Baum
  • Patent number: 7531679
    Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
    Type: Grant
    Filed: November 14, 2002
    Date of Patent: May 12, 2009
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Ravi K. Laxman, Thomas H. Baum, Bryan Hendrix, Jeffrey Roeder
  • Publication number: 20090084288
    Abstract: This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
    Type: Application
    Filed: October 7, 2008
    Publication date: April 2, 2009
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Ziyun Wang, Chongying Xu, Thomas H. Baum, Bryan Hendrix, Jeffrey F. Roeder