Abstract: Electrostatic chucks (ESCs) are used to provide a clamping force between the substrate and the pedestal during semiconductor processes. However, it is difficult to measure a chucking state of the substrate during a live process, as this usually requires invasive measurements or additional hardware to be added to the pedestal. A new technique for monitoring a chucking state electrically isolates the ESC from the system ground to create a single conductive path through the ESC power supplies, ESC electrodes, and the substrate. A floating voltage between the two power supplies may change with the chucking state of the substrate, and this voltage may be monitored to determine the real-time chucking state of the substrate. This provides an unintrusive way to monitor the ESC state in real-time during a semiconductor process at the controller without disturbing the process or modifying the pedestal.

Abstract: Electrostatic chucks are used to provide a clamping force between the substrate and the pedestal during semiconductor processes. However, charge buildup on the chuck electrodes and/or the substrate may cause damaging current arcs to occur as excess charge finds new pathways to the system ground. This technology uses floating power sources for the electrostatic chuck that are electrically isolated from the system ground. The power sources for the positive and negative electrodes in the pedestal may be connected together, and the typical ground connection between the power supplies can be removed. Floating and connected power supplies create a single current path that balances current between the two electrodes and eliminates free current paths to the system ground. This greatly reduces the likelihood of current arcs from the electrostatic chuck.

Abstract: Electrostatic chucks (ESCs) are used to provide a clamping force between the substrate and the pedestal during semiconductor processes. However, it is difficult to measure a chucking state of the substrate during a live process, as this usually requires invasive measurements or additional hardware to be added to the pedestal. A new technique for monitoring a chucking state electrically isolates the ESC from the system ground to create a single conductive path through the ESC power supplies, ESC electrodes, and the substrate. A floating voltage between the two power supplies may change with the chucking state of the substrate, and this voltage may be monitored to determine the real-time chucking state of the substrate. This provides an unintrusive way to monitor the ESC state in real-time during a semiconductor process at the controller without disturbing the process or modifying the pedestal.

Abstract: A semiconductor processing chamber may include an electrostatic chuck (ESC) with one or more electrodes that may deliver a chucking voltage to the pedestal. The pedestal can support a substrate while a semiconductor process occurs in the semiconductor processing chamber. The one or more electrodes may be coupled to an ESC power source that may provide the chucking voltage and may have an adjustable current limit. The adjustable current limit may be set based on certain characteristics of a semiconductor process that may be occurring in the semiconductor processing chamber. The ESC power source can prevent the supplied current from exceeding the adjustable current limit, thereby preventing current arcs from discharging into the substrate.

Abstract: Embodiments described herein generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of amorphous carbon films on a substrate with improved etch selectivity. In certain embodiments, a method of forming an amorphous carbon film with film density close to the theoretical density of pure sp2 graphite and reduced hydrogen content is provided.

Abstract: Provided is a method of igniting a plasma to quickly ignite a plasma without causing undesirable arcing. The method of igniting a plasma according to the present invention includes: a supplying step of supplying a process gas into a chamber 1 provided in a plasma generating system; an igniting step of igniting a plasma by irradiating the process gas supplied into the chamber with laser light L emitted from a semiconductor laser 10 and applying a high frequency power to a coil 2 or an electrode 91 for generating plasma provided in the plasma generating system; and a stopping step of stopping emission of the laser light from the semiconductor laser after the plasma is ignited. Preferably, the coil is a cylindrical coil, and in the igniting step, the laser light is obliquely irradiated from above the cylindrical coil toward below the cylindrical coil.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract: Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract: Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O2) and a gas including a carbon sulfur terminal ligand. A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity to inorganic dielectric layers. In certain embodiments, the etchant gas mixture includes only the two components, COS and O2, but in other embodiments additional gases, such as at least one of molecular nitrogen (N2), carbon monoxide (CO) or carbon dioxide (CO2) may be further employed to etch to carbonaceous layers.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract: Methods and apparatus for minimizing reflected radio frequency (RF) energy are provided herein. In some embodiments, an apparatus may include a first RF energy source having frequency tuning to provide a first RF energy, a first matching network coupled to the first RF energy source, one or more sensors to provide first data corresponding to a first magnitude and a first phase of a first impedance of the first RF energy, wherein the first magnitude is equal a first resistance defined as a first voltage divided by a first current and the first phase is equal to a first phase difference between the first voltage and the first current, and a controller adapted to control a first value of a first variable element of the first matching network based upon the first magnitude and to control a first frequency provided by the first RF energy source based upon the first phase.

Abstract: Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract: Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O2) and a gas including a carbon sulfur terminal ligand. A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity to inorganic dielectric layers. In certain embodiments, the etchant gas mixture includes only the two components, COS and O2, but in other embodiments additional gases, such as at least one of molecular nitrogen (N2), carbon monoxide (CO) or carbon dioxide (CO2) may be further employed to etch to carbonaceous layers.