Abstract: A method and system for performing backside analysis on a silicon-on-insulator (SOI) device is disclosed. The SOI device includes a silicon layer, a buried oxide layer (BOX), an active layer containing active devices, and multiple metal layers. The method includes opening a window in the silicon layer using the BOX layer as a stop, and using the window as a field of view to view structures in the active layer with a microscope, wherein defects can be detected in the device without delayering any of the metal layers, such that the device remains functional for testing.

Abstract: A method and system for performing failure analysis on a silicon on insulator (SOI) semiconductor device is disclosed. The SOI device includes a plurality of conductive structures in a silicon region. The silicon resides on a box insulator, which resides on a silicon substrate. The method and system include providing a cross-section of the SOI semiconductor device. The cross-section of the SOI semiconductor device includes a portion of the plurality of conductive structures. The method and system also include staining the cross-section of the SOI semiconductor device using a stain. The stain etches the silicon region in the SOI semiconductor device without etching a remaining portion of the SOI semiconductor device not composed of silicon.

Abstract: A diode is formed at the tip of a pointed portion of a probe of a scanning probe microscope. When the diode is forward biased, the current through the diode varies with the temperature of the diode. The magnitude of the current is an indication of the temperature of the tip of the probe. If the tip is scanned over a surface, a thermal map of the surface can be made and hot spots on the surface located. In some embodiments, the pointed portion of the probe is made of a semiconductor material (for example, silicon). A layer of a metal (for example, platinum) is made to contact the semiconductor material of the pointed portion only at the tip of the pointed portion, thereby forming a very small temperature sensing Schottky diode at the tip of the pointed portion.