Abstract: One illustrative method disclosed herein includes, among other things, forming a plurality of gate structures above a semiconductor substrate, wherein a plurality of cavities are defined between adjacent gate structures, and performing a first atomic layer deposition process to form a first stressed dielectric layer in the plurality of cavities and define a first seam in each cavity of the plurality of cavities, each first seam having a height greater than a height of the adjacent gate structures.

Abstract: A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.

Abstract: A device and method for generating extremely short-wave ultraviolet electromagnetic wave, utilizing a theta pinch plasma generator to produce electromagnetic radiation in the range of 10 to 20 nm. The device comprises an axially aligned open-ended pinch chamber defining a plasma zone adapted to contain a plasma generating gas within the plasma zone; a means for generating a magnetic field radially outward of the open-ended pinch chamber to produce a discharge plasma from the plasma generating gas, thereby producing a electromagnetic wave in the extreme ultraviolet range; a collecting means in optical communication with the pinch chamber to collect the electromagnetic radiation; and focusing means in optical communication with the collecting means to concentrate the electromagnetic radiation.

Abstract: According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a plurality of openings in a portion of a first side of a substrate, bonding a first silicon layer of a silicon on insulator wafer to the first side of the substrate, wherein the silicon on insulator wafer comprises the first silicon layer disposed on an insulator layer disposed on a second silicon layer, forming a plurality of support structures by removing a portion of a second side of the substrate, removing the second silicon layer and removing the insulator layer.

Abstract: In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.

Abstract: According to a first embodiment of the invention, a dual cathode electrode for generating EUV light is disclosed. The dual cathode electrode may include a first outer cathode, a second inner cathode, and an anode disposed between the inner and outer cathodes. The dual cathode electrode also includes a plasma disposed in between the cathodes that emits EUV photons when it is excited by an arc between the anode and the cathodes. According to a second embodiment of the invention, several Dense Plasma Focus (DPF) electrodes are placed along a circle. The DPF electrodes, when activated, will emit electron photons from the circle in which they are placed thereby avoiding obscuration used to protect UV mirrors against debris.

Abstract: According to an embodiment of the invention, extreme ultraviolet (EUV) photolithography is performed using lobster eye transmission optics. A light source, such as a source plasma, is located at the center of a circle. Several mirror segments are arranged on an arc of the circle. The mirror segments may be arranged so that the light generated by the light source is collimated after being reflected. The light source may be a source plasma capable of generating EUV photons.

Abstract: According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.

Abstract: Passivation coatings and gettering agents may be used in an Extreme Ultraviolet (EUV) source which uses tin (Sn) vapor as a plasma “fuel” to prevent contamination and corresponding loss of reflectivity due to tin contamination. The passivation coating may be a material to which tin does not adhere, and may be placed on reflective surfaces in the source chamber. The gettering agent may be a material that reacts strongly with tin, and may be placed outside of the collector mirrors and/or on non-reflective surfaces. A passivation coating may also be provided on the insulator between the anode and cathode of the source electrodes to prevent shorting due to tin coating the insulator surface.

Abstract: An extreme ultraviolet (EUV) pellicle including a thin film or membrane and a supportive wire mesh. The pellicle allows EUV radiation to pass through the pellicle to a reticle but prevents particles from passing through the pellicle. A buffer gas supports the film against the wire mesh. The film or membrane may be embedded with support fibers or beams.

Abstract: Erosion of material in an electrode in a plasma-produced extreme ultraviolet (EUV) light source may be reduced by treating the surface of the electrode. Grooves may be provided in the electrode surface to increase re-deposition of electrode material in the grooves. The electrode surface may be coated with a porous material to reduce erosion due to brittle destruction. The electrode surface may be coated with a pseudo-alloy to reduce erosion from surface waves caused by the plasma in molten material on the surface of the electrode.

Abstract: A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.

Abstract: A method of forming a device feature using an extreme ultraviolet (EUV) imaging layer (or a sub-deep ultraviolet imaging layer) and one or more other masks layers. The method includes forming a device feature layer; forming a photoresist layer over the device feature layer; forming a contact mask layer (CML) over the photoresist layer; forming an extreme ultraviolet (EUV) imaging layer over the CML; forming a first opening through the EUV imaging layer to expose a first underlying region of the CML; forming a second opening through the CML to expose a second underlying region of the photoresist layer, wherein the second opening is situated directly below the first opening; forming a third opening through the photoresist layer to expose a third underlying region of the device feature layer, wherein the third opening is situated directly below the second opening; forming a fourth opening through the device feature material layer, wherein the fourth opening is situated directly below the third opening.

Abstract: A chair is provided that functions well as an ordinary office chair, and which can be used to perform exercises. The chair includes all the attributes of a comfortable office chair, including a padded seat with a seat bottom and seat back, and a pedestal with casters that rollably support the seat on a chair pad lying behind an office desk. The seat back (18, FIG. 1) has an upper part (32) with extendable handles (34, 36) that can be grasped to raise and lower it while a mechanism resists vertical movement to provide exercise. The seat has armrests (100, 102) that each have a moveable portion with extendable handles (114) and a resistance mechanism (115) to provide exercise in raising and lowering the armrests. The chair also has an extendable mechanism (140) mounted under the seat bottom and having a pair of foot handles (150, 152) that allow the seated person to move the handles forward and back for further exercise.