Patents by Inventor Bryan S. Kasprowicz

Bryan S. Kasprowicz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230161259
    Abstract: A pellicle assembly for large-size photomasks including a frame member configured to be affixed to a large-size photomask substrate, a substantially rigid and transparent pellicle membrane affixed to the frame member so as to protect at least a portion of the large-size photomask substrate from contamination during usage, storage and/or transport, and a coating on at least one of top and bottom surfaces of the pellicle membrane that binds the pellicle membrane to prevent separation of pellicle membrane material in the event of breakage.
    Type: Application
    Filed: November 21, 2022
    Publication date: May 25, 2023
    Inventors: Bryan S. Kasprowicz, Christopher Progler
  • Patent number: 11537050
    Abstract: A pellicle assembly for large-size photomasks including a frame member configured to be affixed to a large-size photomask substrate, a substantially rigid and transparent pellicle membrane affixed to the frame member so as to protect at least a portion of the large-size photomask substrate from contamination during usage, storage and/or transport, and a coating on at least one of top and bottom surfaces of the pellicle membrane that binds the pellicle membrane to prevent separation of pellicle membrane material in the event of breakage.
    Type: Grant
    Filed: August 12, 2021
    Date of Patent: December 27, 2022
    Assignee: PHOTRONICS, INC.
    Inventors: Bryan S. Kasprowicz, Christopher Progler
  • Publication number: 20210389664
    Abstract: A pellicle assembly for large-size photomasks including a frame member configured to be affixed to a large-size photomask substrate, a substantially rigid and transparent pellicle membrane affixed to the frame member so as to protect at least a portion of the large-size photomask substrate from contamination during usage, storage and/or transport, and a coating on at least one of top and bottom surfaces of the pellicle membrane that binds the pellicle membrane to prevent separation of pellicle membrane material in the event of breakage.
    Type: Application
    Filed: August 12, 2021
    Publication date: December 16, 2021
    Inventors: Bryan S. Kasprowicz, Christopher Progler
  • Patent number: 11119403
    Abstract: A pellicle assembly for large-size photomasks including a frame member configured to be affixed to a large-size photomask substrate, a substantially rigid and transparent pellicle membrane affixed to the frame member so as to protect at least a portion of the large-size photomask substrate from contamination during usage, storage and/or transport, and a coating on at least one of top and bottom surfaces of the pellicle membrane that binds the pellicle membrane to prevent separation of pellicle membrane material in the event of breakage.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: September 14, 2021
    Assignee: Place Exchange, Inc.
    Inventors: Bryan S. Kasprowicz, Christopher Progler
  • Publication number: 20200081337
    Abstract: A pellicle assembly for large-size photomasks including a frame member configured to be affixed to a large-size photomask substrate, a substantially rigid and transparent pellicle membrane affixed to the frame member so as to protect at least a portion of the large-size photomask substrate from contamination during usage, storage and/or transport, and a coating on at least one of top and bottom surfaces of the pellicle membrane that binds the pellicle membrane to prevent separation of pellicle membrane material in the event of breakage.
    Type: Application
    Filed: September 12, 2019
    Publication date: March 12, 2020
    Inventors: Bryan S. Kasprowicz, Christopher Progler
  • Patent number: 9005848
    Abstract: A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field area is defined by a width of at least 90 mm and a length of at least 100 mm, and the reduced field area is defined by a width within the range of approximately 20-80 mm and a length within the range of approximately 20-80 mm.
    Type: Grant
    Filed: June 17, 2009
    Date of Patent: April 14, 2015
    Assignee: Photronics, Inc.
    Inventors: Bryan S. Kasprowicz, Christopher J. Progler
  • Patent number: 9005849
    Abstract: A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field area is defined by a width of at least 90 mm and a length of at least 100 mm, and the reduced field area is defined by a width within the range of approximately 20-80 mm and a length within the range of approximately 20-80 mm, a center point of the primary patterned area being spaced a predetermined distance from a center point of the photomask so that the primary patterned area avoids photomask defects.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: April 14, 2015
    Assignee: Photronics, Inc.
    Inventors: Bryan S. Kasprowicz, Christopher J. Progler
  • Publication number: 20110086511
    Abstract: A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field area is defined by a width of at least 90 mm and a height of at least 100 mm, and the reduced field area is defined by a width within the range of approximately 20-80 mm and a height within the range of approximately 20-80 mm, a center point of the primary patterned area being spaced a predetermined distance from a center point of the photomask so that the primary patterned area avoids photomask defects.
    Type: Application
    Filed: June 22, 2010
    Publication date: April 14, 2011
    Inventors: Bryan S. Kasprowicz, Christopher J. Progler
  • Publication number: 20100129736
    Abstract: A photomask used for manufacturing a semiconductor device includes a substrate; and one or more layers disposed over the substrate, the one or more layers defining a full field area and a reduced field area with a primary pattern being formed in the reduced field area, wherein the full field area is defined by a width of at least 90 mm and a height of at least 100 mm, and the reduced field area is defined by a width within the range of approximately 20-80 mm and a height within the range of approximately 20-80 mm.
    Type: Application
    Filed: June 17, 2009
    Publication date: May 27, 2010
    Inventors: Bryan S. Kasprowicz, Christopher J. Progler