Patents by Inventor Bryan Schwitter

Bryan Schwitter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FET operational temperature determination by field plate resistance thermometry
    Patent number: 10855230
    Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 1, 2020
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: Simon John Mahon, Allen W. Hanson, Bryan Schwitter, Chuanxin Lian, Rajesh Baskaran, Frank Gao
  • FET operational temperature determination by gate structure resistance thermometry
    Patent number: 10790787
    Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: September 29, 2020
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventors: Simon John Mahon, Allen W. Hanson, Chuanxin Lian, Frank Gao, Rajesh Baskaran, Bryan Schwitter
  • FET OPERATIONAL TEMPERATURE DETERMINATION BY GATE STRUCTURE RESISTANCE THERMOMETRY
    Publication number: 20200144970
    Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
    Type: Application
    Filed: August 12, 2019
    Publication date: May 7, 2020
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: Simon John Mahon, Allen W. Hanson, Chuanxin Lian, Frank Gao, Rajesh Baskaran, Bryan Schwitter
  • FET OPERATIONAL TEMPERATURE DETERMINATION BY FIELD PLATE RESISTANCE THERMOMETRY
    Publication number: 20200144969
    Abstract: Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.
    Type: Application
    Filed: August 12, 2019
    Publication date: May 7, 2020
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: Simon John Mahon, Allen W. Hanson, Bryan Schwitter, Chuanxin Lian, Rajesh Baskaran, Frank Gao