Patents by Inventor Bryant Linares
Bryant Linares has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8455278Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: GrantFiled: November 14, 2011Date of Patent: June 4, 2013Assignee: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, William W. Dromeshauser, Bryant Linares, Alfred R. Genis
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Publication number: 20120058602Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: ApplicationFiled: November 14, 2011Publication date: March 8, 2012Applicant: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, William W. Dromeshauser, Bryant Linares, Alfred R. Genis
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Patent number: 8058085Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: GrantFiled: July 11, 2006Date of Patent: November 15, 2011Assignee: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, William W. Dromeshauser, Bryant Linares, Alfred R. Genis
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Publication number: 20110054450Abstract: Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.Type: ApplicationFiled: November 3, 2010Publication date: March 3, 2011Applicant: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, Bryant Linares, Alfred R. Genis, William W. Dromeshauser, Michael Murray, Alicia E. Novak, John M. Abrahams
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Patent number: 7829377Abstract: Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.Type: GrantFiled: January 11, 2006Date of Patent: November 9, 2010Assignee: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, Bryant Linares, Alfred R. Genis, William W. Dromeshauser, Michael Murray, Alicia E. Novak, John M. Abrahams
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Publication number: 20100055022Abstract: Diamonds are embedded with one or more layers representative of an identifier. The identifier may include encoding in the form of defects created in one or more layers in a recognizable pattern, such as a bar code, characters or symbols. In some embodiments, a single crystal CVD diamond is formed with layers of varying thickness to provide the encoding. A system includes a radiation source to provide short wavelength light. A holder positions a gemstone to receive the light. A detector is positioned to receive fluorescent light from the gemstone when the gemstone is a CVD grown gemstone, and a pattern identifier correlates a detected pattern of defects to unique identification information.Type: ApplicationFiled: May 8, 2009Publication date: March 4, 2010Applicant: Apollo Diamond Gemstone CorporationInventors: Bryant Linares, Robert C. Linares, Patrick J. Doering
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Publication number: 20090214169Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: ApplicationFiled: July 11, 2006Publication date: August 27, 2009Inventors: Robert C. Linares, Patrick J. Doering, William W. Dromeshauser, Bryant Linares, Alfred R. Genis
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Publication number: 20060234419Abstract: Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.Type: ApplicationFiled: January 11, 2006Publication date: October 19, 2006Inventors: Robert Linares, Patrick Doering, Bryant Linares, Alfred Genis, William Dromeshauser, Michael Murray, Alicia Novak, John Abrahams
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Patent number: 7122837Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: GrantFiled: July 11, 2005Date of Patent: October 17, 2006Assignee: Apollo Diamond, IncInventors: Robert C. Linares, Patrick J. Doering, William Dromeshauser, Bryant Linares, Alfred Genis
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Publication number: 20060157713Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.Type: ApplicationFiled: July 11, 2005Publication date: July 20, 2006Inventors: Robert Linares, Patrick Doering, William Dromeshauser, Bryant Linares, Alfred Genis