Abstract: Methods and systems for determining focus settings for use in a specimen scan are provided. One method includes generating a focus map defined as values of best focus as a function of position on a specimen using output generated in one or more pre-focus swaths scanned on the specimen by an output acquisition subsystem configured to direct energy to a specimen, to detect energy from the specimen, and to generate output responsive to the detected energy. The method also includes interpolating the focus map to generate focus settings for a scan performed on the specimen during a process and storing information for the generated focus settings for use in the scan performed on the specimen during the process.

Abstract: Methods and systems for determining focus settings for use in a specimen scan are provided. One method includes generating a focus map defined as values of best focus as a function of position on a specimen using output generated in one or more pre-focus swaths scanned on the specimen by an output acquisition subsystem configured to direct energy to a specimen, to detect energy from the specimen, and to generate output responsive to the detected energy. The method also includes interpolating the focus map to generate focus settings for a scan performed on the specimen during a process and storing information for the generated focus settings for use in the scan performed on the specimen during the process.

Abstract: A method of semiconductor-wafer image alignment is performed at a semiconductor-wafer defect-inspection system. In the method, a semiconductor wafer is loaded into the semiconductor-wafer defect-inspection system. Pre-inspection alignment is performed for the semiconductor wafer. After performing the pre-inspection alignment, a first swath is executed to generate a first image of a first region on the semiconductor wafer. An offset of a target structure in the first image with respect to a known point is determined. Defect identification is performed for the first image, using the offset. After executing the first swath and determining the offset, a second swath is executed to generate a second image of a second region on the semiconductor wafer. While executing the second swath, run-time alignment of the semiconductor wafer is performed using the offset.

Abstract: A method of semiconductor-wafer image alignment is performed at a semiconductor-wafer defect-inspection system. In the method, a semiconductor wafer is loaded into the semiconductor-wafer defect-inspection system. Pre-inspection alignment is performed for the semiconductor wafer. After performing the pre-inspection alignment, a first swath is executed to generate a first image of a first region on the semiconductor wafer. An offset of a target structure in the first image with respect to a known point is determined. Defect identification is performed for the first image, using the offset. After executing the first swath and determining the offset, a second swath is executed to generate a second image of a second region on the semiconductor wafer. While executing the second swath, run-time alignment of the semiconductor wafer is performed using the offset.

Abstract: Systems and methods for tool health monitoring and matching through integrated real-time data collection, event prioritization, and automated determination of matched states through image analysis are disclosed. Data from the semiconductor production tools can be received in real-time. A control limit impact (CLI) of the parametric data and the defect attributes data can be determined and causation factors can be prioritized. Image analysis techniques can compare images and can be used to judge tool matching, such as by identifying one of the states at which the two or more of the semiconductor manufacturing tools match.

Abstract: Systems and methods for tool health monitoring and matching through integrated real-time data collection, event prioritization, and automated determination of matched states through image analysis are disclosed. Data from the semiconductor production tools can be received in real-time. A control limit impact (CLI) of the parametric data and the defect attributes data can be determined and causation factors can be prioritized. Image analysis techniques can compare images and can be used to judge tool matching, such as by identifying one of the states at which the two or more of the semiconductor manufacturing tools match.