Patents by Inventor Bryce A. Rasmussen

Bryce A. Rasmussen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9189585
    Abstract: A design rule checker that performs a maximum pattern density check in a first intermediary metallization layer that underlies a top metallization layer and a pad opening in an integrated circuit. The maximum pattern density check is performed at least under some circumstances if a modulus of the primary metallization material is less than a modulus of a surrounding dielectric material. The maximum pattern density check verifies that the pattern density within the underlying portion is below a maximum pattern density that depends on the thickness of the access pad. A maximum metal width check may also be performed in this portion.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: November 17, 2015
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC.
    Inventors: Stevan G. Hunter, Bryce A. Rasmussen, Troy L. Ruud
  • Publication number: 20140310669
    Abstract: A design rule checker that performs a maximum pattern density check in a first intermediary metallization layer that underlies a top metallization layer and a pad opening in an integrated circuit. The maximum pattern density check is performed at least under some circumstances if a modulus of the primary metallization material is less than a modulus of a surrounding dielectric material. The maximum pattern density check verifies that the pattern density within the underlying portion is below a maximum pattern density that depends on the thickness of the access pad. A maximum metal width check may also be performed in this portion.
    Type: Application
    Filed: June 27, 2014
    Publication date: October 16, 2014
    Inventors: Stevan G. Hunter, Bryce A. Rasmussen, Troy L. Ruud
  • Publication number: 20130154099
    Abstract: A design rule checker that performs a maximum pattern density check in a first intermediary metallization layer that underlies a top metallization layer and a pad opening in an integrated circuit. The maximum pattern density check is performed at least under some circumstances if a modulus of the primary metallization material is less than a modulus of a surrounding dielectric material. The maximum pattern density check verifies that the pattern density within the underlying portion is below a maximum pattern density that depends on the thickness of the access pad. A maximum metal width check may also be performed in this portion.
    Type: Application
    Filed: December 16, 2011
    Publication date: June 20, 2013
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Stevan G. Hunter, Bryce A. Rasmussen, Troy L. Ruud
  • Patent number: 6909305
    Abstract: A digitally controlled impedance driver circuit including a number of fingers, some of which having FETs and series resistors sized in binary or other differential ratios, and some of the higher power FETs being sized in equal ratio and perhaps sharing a series resistor. A DCI controller circuit periodically determines a configuration of the DCI driver circuit that would result in the DCI driver circuit approximating a target impedance. Each time the DCI controller circuit does this, a comparator determines if the impedance of the DCI driver circuit should be increased or decreased. A noise attenuation circuit turns off (or on) only one of the high power fingers if the controller circuit determines that more (or less) impedance is needed even if turning off (or on) only one of the fingers would not result in the configuration of the DCI driver circuit determined by the controller circuit.
    Type: Grant
    Filed: August 8, 2003
    Date of Patent: June 21, 2005
    Assignee: AMI Semiconductor, Inc.
    Inventors: Zhongmin Li, Troy Ruud, Bryce Rasmussen, Shan Mo
  • Patent number: 6822513
    Abstract: A complementary differential amplifier includes two differential amplifiers. Each differential amplifier includes two input FETs (or bipolar transistors) having gate terminals coupled to the input terminals of the complementary differential amplifier. Two current load p-type field-effect transistors are each coupled in series between one voltage source and a drain terminal of a respective input FET. A current source FET is coupled in series between a common source terminal of the two input n-type field-effect transistors and a low voltage source. Only two FETs are needed to bias all of the current load and source FETs. A complementary folded cascode stage as well as an inverter stage may also be included.
    Type: Grant
    Filed: May 28, 2003
    Date of Patent: November 23, 2004
    Assignee: AMI Semiconductor, Inc.
    Inventors: Zhongmin Li, Bryce Rasmussen