Abstract: A diamond anvil cell device includes a first diamond anvil having a culet cut to provide a first anvil surface that is substantially perpendicular to a [111] crystal axis thereof; and a second diamond anvil having a culet cut to provide a second anvil surface. The at least one of the first and second diamond anvils includes an ion-crystal-vacancy-defect pair formed therein at a distance of at least 10 nm to 5 ?m from the corresponding first or second anvil surface, and a remaining portion of the at least one of the first and second diamond anvils at distances farther than 5 ?m from the first or second anvil surface is substantially free of ion-crystal-vacancy-defect pairs. A diamond anvil for a diamond anvil cell is defined by a plurality of flat surfaces resulting from cuts in a bulk piece of diamond having [111], [100] and [110] crystal axes, wherein one of said plurality of flat surfaces is a culet cut to provide an anvil surface of the diamond anvil.

Abstract: A pressure chamber has a chamber wall. The chamber wall includes a sensor integrated within the chamber wall, wherein the sensor integrated in the chamber wall comprises defects. A method of determining an effect of pressure on a material is further described. The method includes applying pressure to a material within a pressure chamber and to a pressure chamber wall of the pressure chamber, where the pressure chamber wall has defects. A signal from the defects is sensed while the material and the pressure chamber wall are under pressure. A property of the material is determined based on the sensed signal.

Abstract: A pressure chamber has a chamber wall. The chamber wall includes a sensor integrated within the chamber wall, wherein the sensor integrated in the chamber wall comprises defects. A method of determining an effect of pressure on a material is further described. The method includes applying pressure to a material within a pressure chamber and to a pressure chamber wall of the pressure chamber, where the pressure chamber wall has defects. A signal from the defects is sensed while the material and the pressure chamber wall are under pressure. A property of the material is determined based on the sensed signal.