Patents by Inventor Brymer H. Chin

Brymer H. Chin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multiple meltback procedure for LPE growth on InP
    Patent number: 4662983
    Abstract: A multiple meltback procedure is described for removing gross contaminants and thermal degradation from InP-containing surfaces. Prior to LPE growth on an InP substrate, the substrate surface is brought into contact briefly (.ltorsim.1 sec) with an essentially pure In melt and is then brought into contact with a slightly undersaturated In/P melt. A similar triple meltback procedure is described for use prior to LPE growth over a mesa (e.g., in the fabrication of buried heterostructures).
    Type: Grant
    Filed: May 3, 1985
    Date of Patent: May 5, 1987
    Assignee: American Telephone and Telegraph Company AT&T Bell Laboratories
    Inventor: Brymer H. Chin
  • Multiple wavelength light emitting devices
    Patent number: 4605942
    Abstract: Presented is a dual wavelength structure wherein two edge-emitting devices are bonded with p-regions adjacent. The bonding medium is a conductive compound that forms a common electrode between the devices. Each device is separately addressable. Efficient coupling of emitted light into a single fiber is accomplished by restricting the vertical and horizontal separation of the light emitting stripes.
    Type: Grant
    Filed: October 9, 1984
    Date of Patent: August 12, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: Irfan Camlibel, Aland K. Chin, Brymer H. Chin
  • Forming platinum contacts to in-based group III-V compound devices
    Patent number: 4538342
    Abstract: Electrical contacts with low specific-contact resistance to In-based Group III-V compound semiconductors (e.g., p-InGaAsP) are formed by electron beam depositing a thin Pt layer directly on the semiconductor and sintering at about 450.degree.-525.degree. C. for about 5-30 minutes. Light emitting diodes without dark spot defects can be fabricated using this technique.
    Type: Grant
    Filed: June 15, 1984
    Date of Patent: September 3, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Irfan Camlibel, Aland K. Chin, Brymer H. Chin, Christie L. Zipfel