Abstract: Devices and systems for insulating integrated circuits from ultraviolet (“UV”) light are described. The device includes a conductive feature, a first and second UV blocking layer, a first and second insulating laver, and a conductive structure. The first insulating layer overlays the first UV blocking layer. A via opening extends through the first insulating layer and the first UV blocking layer. The second UV blocking layer overlays the first insulating laver. The second insulating layer overlays the second UV blocking layer. An interconnect trench is defined in the second insulating layer and second UV blocking layer. The conductive structure is electrically connected to the conductive feature and extends into the via opening and along the interconnect trench.

Abstract: An electronic device can include a conductive feature and an ultraviolet (“UV”) blocking layer overlying the conductive feature. The electronic device can also include an insulating layer overlying the UV blocking layer. The electronic device can further include a conductive structure extending into an opening within the insulating layer, wherein the conductive structure is electrically connected to the conductive feature. In one aspect, the UV blocking layer lies within 90 nm of the conductive structure. The insulating layer can be at least 4 times thicker than the UV blocking layer. In another aspect, a method can be used in forming the electronic device. In still a further aspect, a system can include the electronic device, a processor, and a display, wherein the processor is electrically coupled to the electronic device and the display.

Abstract: A process of forming an electronic device including forming a first ultraviolet (“UV”) blocking layer over a conductive feature, wherein the first UV blocking layer lies within 90 nm of the conductive structure; forming a first insulating layer over the first UV blocking layer; and patterning the first insulating layer and the first UV blocking layer to form a first opening extending to the conductive feature, wherein during the process, the first UV blocking layer is exposed to UV radiation.

Abstract: An electronic device can include a conductive feature and an ultraviolet (“UV”) blocking layer overlying the conductive feature. The electronic device can also include an insulating layer overlying the UV blocking layer. The electronic device can further include a conductive structure extending into an opening within the insulating layer, wherein the conductive structure is electrically connected to the conductive feature. In one aspect, the UV blocking layer lies within 90 nm of the conductive structure. The insulating layer can be at least 4 times thicker than the UV blocking layer. In another aspect, a method can be used in forming the electronic device. In still a further aspect, a system can include the electronic device, a processor, and a display, wherein the processor is electrically coupled to the electronic device and the display.

Abstract: Methods and apparatus for inspecting a feature on a wafer surface are provided. In one aspect a method of inspecting a feature on a film surface is provided that includes illuminating the feature with laser radiation and detecting radiation scattered from the feature with a plurality of detectors. Each of the plurality of detectors has a known position. A position of the feature observed by each of the plurality detectors is computed based upon the radiation scattered from the feature. An average position of the positions observed by each of the plurality of detectors is computed. A first value for each of the plurality of detectors is computed that is the scalar product of the known position of a given detector with the difference of the position of the feature observed by that given detector and the average of the positions observed by each of the plurality of detectors.

Abstract: Various methods and apparatus are provided for testing an ion implantation tool. In one aspect, a method of testing an ion implanter is provided that includes forming a mask with a preselected pattern on a substrate. An ion implant is performed on the mask with the ion implanter. Following the ion implant, a scan of the mask is performed to identify any defects thereon. Defects appearing on the mask following the implant are indicative of latent mechanisms at work within the implanter. Ion implanter induced defects may be economically analyzed.

Abstract: A method and system for use in wafer fabrication quality control. The method and system make quantitative a qualitative integrated circuit wafer defect signature. In response to the quantitativize wafer fabrication defect signature, the method and system identify at least one cause of the defect signature.