Abstract: The present disclosure relates to a substrate treatment apparatus comprising: a process chamber; a first electrode positioned in the upper part of the process chamber; a second electrode positioned below the first electrode and including a plurality of openings; a plurality of protruding electrodes extending from the first electrode to the plurality of openings of the second electrode; and a substrate support part facing the second electrode and supporting a substrate.

Abstract: A substrate processing apparatus includes a process chamber providing a reaction space therein and including a substrate entrance through which a substrate enters or exits, a susceptor disposed inside the process chamber and supporting the substrate, a gas injector disposed on an opposing surface to inject a gas toward the substrate, a valve opening and closing the substrate entrance, and a control electrode formed on the valve. The control electrode is vertically driven.

Abstract: A substrate processing apparatus includes a process chamber, an upper electrode disposed in an upper portion inside the process chamber and disposed to be spaced apart from an upper surface of the process chamber, a lower electrode disposed to oppose the upper electrode at a constant distance from the upper electrode, a substrate seating means, electrically grounded and disposed to face the lower electrode at a constant distance from the lower electrode, in which a substrate is mounted, and a variable capacitor connected between the lower electrode and a ground or between the lower electrode and an output terminal of an RF power supply.

Abstract: A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field.

Abstract: A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface.

Abstract: In one embodiment, a method of removing film materials on an edge area of a substrate in a plasma etching apparatus is disclosed. The apparatus includes a chamber, a substrate support, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an edge portion of the substrate to be exposed, and an antenna disposed on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber. The method includes spraying a curtain gas to a space between the shield and the substrate, using a curtain gas passageway; and spraying a reaction gas to an area between a side surface of the shield and an inner sidewall of the chamber formed within the shield, using a reaction gas supply passageway.

Abstract: A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field.

Abstract: A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface.

Abstract: A substrate processing apparatus includes a process chamber having a chamber lid and a chamber body to provide a reaction space and a gas distributing means including a plate and an injection part in the process chamber. The injection part includes a plurality of through holes in the plate and a discharge portion capable of being in fluid communication with the plurality of through holes. The discharge portion has a matrix shape and provides a space where a plasma is discharged. The apparatus additionally includes a susceptor in the process chamber. The susceptor faces the gas distributing means.

Abstract: The present invention relates to a plasma etching apparatus. In the apparatus, potential difference is applied between a substrate support with a substrate seated thereon and a electrode surrounding an edge region of the substrate, and a distance between the substrate and the electrode is set to 3 mm or less so as to locally generate plasma in an area between the substrate and the electrode, thereby removing particles and a thin film in the edge region of the substrate.

Abstract: An apparatus for processing a substrate includes: a process chamber providing a reaction space by a combination of a lid and a body; a susceptor in the reaction space and having a substrate thereon; a plurality of plasma source electrodes over the reaction space; a plurality of first lower protruding portions under the lid; and a plurality of first gas injecting means corresponding to the plurality of plasma source electrodes and a plurality of second gas injecting means alternately disposed with the plurality of first gas injecting means.

Abstract: In one embodiment, a method of removing film materials on an edge area of a substrate in a plasma etching apparatus is disclosed. The apparatus includes a chamber, a substrate support, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an edge portion of the substrate to be exposed, and an antenna disposed on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber. The method includes spraying a curtain gas to a space between the shield and the substrate, using a curtain gas passageway; and spraying a reaction gas to an area between a side surface of the shield and an inner sidewall of the chamber formed within the shield, using a reaction gas supply passageway.

Abstract: A substrate treatment apparatus includes a process chamber providing a reaction region and including a body and a lid, the lid having a plurality of openings, a plurality of insulating plates sealing the plurality of openings, respectively, a plurality of antennas over the plurality of insulating plates, respectively, a gas injection unit over the lid and the plurality of insulating plates, and a substrate holding unit in the reaction region, wherein a substrate is disposed on the substrate holding unit.

Abstract: The present invention relates to a plasma etching apparatus, which comprises a chamber, a substrate support disposed inside the chamber to support a substrate, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an edge portion of the substrate to be exposed, an antenna disposed at a position on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber, and a bias-applying unit for applying bias to the substrate support. According to the present invention, the shield and the substrate support prevent plasma from being generated at other portions of a substrate except an edge portion of the substrate. Inductively coupled plasma is employed to generate plasma with high density, thereby removing a thin film and particles remained at the edge portion of the substrate.

Abstract: The present invention relates to a plasma etching apparatus, and provides a plasma etching apparatus comprising a substrate support on which a substrate is seated; an electrode disposed close to a surface of the substrate to be etched; a dielectric film formed on a surface of the electrode adjacent to the substrate; and a power supply means for generating potential difference between the electrode and the substrate support. In the apparatus, potential difference is applied between the substrate support with the substrate seated thereon and the electrode surrounding an edge region of the substrate, and a distance between the substrate and the electrode is set to 3 mm or less so as to locally generate plasma in an area between the substrate and the electrode, thereby removing particles and a thin film in the edge region of the substrate.

Abstract: If DNA of human, animal, plant or bacteria, or a bio-sample containing DNA such as blood is well mixed with a water-soluble chitosan, and stored as a liquid state or a solid state using a solid medium such as a paper, it is possible to store DNA stably at room temperature for a long time, and it is also useful for a gene assay henceforth. The DNA storage method is simple and economical, and a product prepared by applying the method such as a DNA card and a PCR kit can store, carry and collect multiple DNA samples, and it is also very useful for an automatic assay. In addition, the DNA ID card can play a role of DNA bank which stores personal DNAs, and it is helpful for personal identification and medical treatment by storing the personal genetic information as well.

Abstract: The present invention relates to a plasma etching apparatus, which comprises a chamber, a substrate support disposed inside the chamber to support a substrate, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an edge portion of the substrate to be exposed, an antenna disposed at a position on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber, and a bias-applying unit for applying bias to the substrate support. According to the present invention, the shield and the substrate support prevent plasma from being generated at other portions of a substrate except an edge portion of the substrate. Inductively coupled plasma is employed to generate plasma with high density, thereby removing a thin film and particles remained at the edge portion of the substrate.