Abstract: A gas injector includes: a plate including at least one first injection hole; and at least one nozzle module combined with the plate, the at least one nozzle module including at least one second injection hole connected to the at least one first injection hole.

Abstract: A gas injector includes: a plate including at least one first injection hole; and at least one nozzle module combined with the plate, the at least one nozzle module including at least one second injection hole connected to the at least one first injection hole.

Abstract: A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate comprised of a plurality of balls and formed by compressing and curing the plurality of balls, the porous plate having a circular planar shape; a plurality of gas flow grooves formed on an upper surface of the porous plate; and a gas distribution plate having a plurality of gas-feed holes at the bottom thereof and a plurality of gas-feed passages in the side portion thereof, the gas distribution plate surrounding lower and side portions of the porous plate.

Abstract: A gas injector includes: a plate including at least one first injection hole; and at least one nozzle module combined with the plate, the at least one nozzle module including at least one second injection hole connected to the at least one first injection hole.

Abstract: An apparatus for manufacturing a semiconductor device includes a chamber, upper and lower electrodes spacing apart and facing each other in the chamber, the upper and lower electrodes supplied with high frequency power to form plasma, an electrostatic chuck on the lower electrode and settling a substrate thereon, a chuck base between the electrostatic chuck and the lower electrode, and protecting the electrostatic chuck, and a helium line supplying helium gas to a gap between the substrate and the electrostatic chuck, the helium line filled with a plurality of fine insulating balls.

Abstract: An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.

Abstract: An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.

Abstract: A controller module for a semiconductor manufacturing device wherein the controller module has a plurality of controllers comprises a control box disposed at an outside of the semiconductor manufacturing device wherein each of the plurality of controllers is separately installed into the control box, and a movable control box support wherein the control box is loaded on the control box support and slides on the control box support.

Abstract: An apparatus for manufacturing a semiconductor device includes a chamber, upper and lower electrodes spacing apart and facing each other in the chamber, the upper and lower electrodes supplied with high frequency power to form plasma, an electrostatic chuck on the lower electrode and settling a substrate thereon, a chuck base between the electrostatic chuck and the lower electrode, and protecting the electrostatic chuck, and a helium line supplying helium gas to a gap between the substrate and the electrostatic chuck, the helium line filled with a plurality of fine insulating balls.

Abstract: Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate.

Abstract: A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate comprised of a plurality of balls and formed by compressing and curing the plurality of balls, the porous plate having a circular planar shape; a plurality of gas flow grooves formed on an upper surface of the porous plate; and a gas distribution plate having a plurality of gas-feed holes at the bottom thereof and a plurality of gas-feed passages in the side portion thereof, the gas distribution plate surrounding lower and side portions of the porous plate.

Abstract: An air exhaust system of a chamber for manufacturing a semiconductor device comprises a chamber, a chuck formed vertically through a bottom of the chamber, a plurality of openings arranged around the chuck with a same area and a same distance each other, a plurality of outlet ducts having a same area and a length, one end of each of the outlet duct being connected respectively to each of the openings, a buffer system connecting the other end of each of the outlet duct into one, a gate valve connected to the buffer system, an auto pressure controller connected to the gate valve, a turbo pump connected to the auto pressure controller for exhausting gaseous material of an interior of the chamber, and a scrubber connected to the turbo pump for filtering and discharging the gaseous material of the interior of the chamber.

Abstract: An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.

Abstract: Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate.

Abstract: Disclosed is a plasma process apparatus in which a semiconductor device manufacturing process using a plasma is performed. The apparatus includes: a vacuum chamber in which a semiconductor device manufacturing process is performed; a very high frequency (VHF) power source for generating a VHF power; a VHF parallel resonance antenna having a plurality of antenna coils connected in parallel to each other, and multiple variable capacitors insertion-installed in series in the antenna coils, the antenna being installed at an outer upper portion of the vacuum chamber, and supplied with the VHF power from the VHF power source; and an impedance matching box for impedance matching between the VHF power and the VHF parallel resonance antenna.

Abstract: An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.