Abstract: Disclosed are a side emitting lens, a light emitting device using the side emitting lens, a mold assembly for preparing the side emitting lens and a method for preparing the side emitting using the mold assembly. The lens of the present invention has a simple structure so the lens is easily fabricated through a molding process. If the lens is applied to the light emitting member, light generated from the light emitting member is laterally guided by means of the lens.

Abstract: Disclosed is a method for manufacturing an optoelectronic semiconductor device having a p-n junction diode, which includes the steps of: (a) etching at least one surface of the p-n junction diode in a depth direction to form a plurality of continuous, isolated or mixed type electrode pattern grooves with a certain array; and (b) filling the formed grooves with a conductive ink containing a transparent conducting particle through an inkjet and then performing heat treatment to form a buried transparent electrode, the optoelectronic semiconductor device, and an apparatus for manufacturing the optoelectronic semiconductor device. In the present invention, covering loss is significantly reduced due to a buried transparent electrode so that the high efficiency of photoelectric conversion can be implemented, and there can be provided the easiness of a manufacturing process and the enhancement of productivity through the unification of etching and electrode forming processes.

Abstract: Disclosed is an LED device, a method for manufacturing the same, and a light emitting apparatus having the same. The LED device includes (a) a light emitting diode unit and (b) an adjustment layer laminated on a light emitting surface of the light emitting diode unit, a fine pattern having being formed on the adjustment layer by repeating a shape in a light emission direction. The adjustment layer is (i) at least one layer formed by aligning transparency adjustment particles having a shape or (ii) a polymer film layer having a fine pattern imprinted on the polymer film layer so as to adjust transparency. A fine pattern adjustment layer having various shapes and an adjustable size is introduced on the light emitting surface of the LED unit. As a result, the light extraction efficiency of the surface of the LED unit improves together with ease of manufacturing and secured uniformity.

Abstract: A method for fabricating an LED having section grown on a sapphire substrate, a boded structure, and a unit chip separated from the bonded structure. The method includes (a) bonding the section grown on a first surface of the sapphire substrate to a first surface of a first substrate with a first binder; (b) bonding a second surface of the first substrate to a first surface of a second substrate with a second binder; (c) removing the second substrate from a bonded structure obtained as a result of step (b) after polishing a second surface of the sapphire substrate; (d) separating the bonded structure into unit chips after the second substrate has been removed; and (e) bonding the second surface of the polished sapphire substrate provided in each unit chip to a lead frame, and removing the first substrate. This method improves heat dissipation efficiency.

Abstract: A light emitting diode devic that includes (a) a light emitting diode section, (b) an electrically conductive pad section being disposed outside the light emitting diode section and being electrically connected to an external power source, and (c) at least one electrically conductive interconnection section for connecting the electrically conductive pad section to one side or both sides of the light emitting diode section. In the light emitting diode device, a wire is connected to the electrically conductive pad section disposed outside the light emitting diode section, and the electrically conductive pad section is connected to one side of the light emitting diode section by means of at least one electrically conductive interconnection section, so that not only it is easy to uniformly coat a fluorescent substance, but also an area covering vertically emitted light can be reduced to enhance a light extraction efficiency of the light emitting diode device.

Abstract: Disclosed is a light emitting diode (LED) device that comprises a crystal structure of a sapphire substrate-free gallium nitride (GaN) LED, wherein the crystal structure is mounted on a first surface of a sub-mount substrate in the form of a unit chip, and the first surface of the sub-mount substrate has a surface area greater than the surface area of a region in which the unit chip is bonded. Preforms for manufacturing the LED device and a method for manufacturing the LED device are also disclosed. The sapphire substrate, on which the crystal structure of the light emitting diode has grown, is processed into a unit chip before being removed. Thus, any crack in the crystal structure of the light emitting diode that may occur during the removal of the sapphire substrate can be prevented. Therefore, a thin light emitting diode device can be manufactured in a mass production system.

Abstract: A simplified manufacturing process for massive production of LEDs that have superior light emitting efficiency and superior heat discharging efficiency. The method employs a laser lift-off technique instead of the flip-chip bonding technique and it does not require a photolithography process, thereby substantially reducing the process steps and enhancing the heat discharging efficiency. The LED chips are formed as unit chips before irradiating the laser, thereby increasing the yield and realizing the mass production by preventing cleavage of the crystal structures. Heat discharging efficiency is also increased by roughening the surface of an n-type GaN layer. The light emitting area can be widened 30% more than in the flip-chip technique. Thus, the present invention serves to increase the light output and the heat discharging area, thereby drastically enhancing the performance of manufacturing high-output LEDs.