Patents by Inventor Buddie R. Dotter, II

Buddie R. Dotter, II has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
    Patent number: 6463874
    Abstract: Apparatus and method for the vacuum deposition of at least two different layers of thin film material onto a substrate by two different vacuum deposition processes. Also disclosed is a novel linear applicator for using microwave enhanced CVD to uniformly deposit a thin film of material over an elongated substrate.
    Type: Grant
    Filed: August 11, 2000
    Date of Patent: October 15, 2002
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Buddie R. Dotter, II, Joachim Doehler, Timothy Ellison, Masatsugo Izu, Herbert C. Ovshinsky
  • Modified silicon oxide barrier coatings produced by microwave CVD deposition on polymeric substrates
    Patent number: 5670224
    Abstract: A method of depositing, by microwave plasma enhanced chemical vapor deposition, a modified, silicon oxide, barrier coating atop a temperature sensitive substrate; said barrier coating having barrier properties to at least gaseous oxygen and water vapor. The precursor gaseous mixture includes at least a silicon-hydrogen containing gas, an oxygen containing gas and a gas containing at least one element selected from the group consisting of germanium, tin, phosphorus, and boron. The method requires introducing a sufficient flow rate of oxygen-containing gas into the precursor gaseous mixture to eliminate the inclusion of silicon-hydrogen bonds into the deposited coating. The preferred modifier is germanium. Also, a composite material having a microwave-plasma-enhanced-chemical-vapor-deposited silicon oxide (modified or non-modified) barrier coating. The barrier coating has barrier properties to at least gaseous oxygen and water vapor and is substantially free of Si--H bonds.
    Type: Grant
    Filed: April 17, 1995
    Date of Patent: September 23, 1997
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Masatsugu Izu, Buddie R. Dotter, II
  • Apparatus for the simultaneous microwave deposition of thin films in multiple discrete zones
    Patent number: 5411591
    Abstract: Apparatus for the simultaneous plasma assisted chemical vapor deposition of thin film material onto an elongated web of substrate material at a plurality of discrete spatially separated deposition zones. In order to accomplish said simultaneous deposition, the web of substrate material is operatively positioned so as to assume a serpentine path of travel through a reduced pressure enclosure. By using an elongated linear applicator as a source of microwave energy, a high rate of uniform deposition of said thin film material over a plurality of large areas of the web of substrate material can be simultaneously achieved without heating of said web above the melting point thereof. In a preferred embodiment, the web of substrate material is formed of a low temperature, microwave transmissive synthetic plastic resin and the thin film material deposited thereupon forms a barrier coating for preventing oxygen diffusion therethrough.
    Type: Grant
    Filed: July 22, 1994
    Date of Patent: May 2, 1995
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Masatsugu Izu, Buddie R. Dotter, II, Stanford R. Ovshinsky, Wataru Hasegawa