Abstract: A solar cell and a method of forming a contact structure on a solar cell having a p-n junction formed between a first semiconductor region of a first dopant polarity and a second semiconductor region of a second dopant polarity opposite to the first dopant polarity. The method comprises: forming a plurality of contact points on a surface of the solar cell, whereby the contact points provide an electrical connection to the first semiconductor region; and locating a plurality of conducting wires over the solar cell to make electrical connection to the contact points. The contact points are either an exposed silicon surface or a silicon surface over which metal pads are formed. The metal pads may comprise a plated layer of a low-melting temperature metal and/or may have a thickness of less than 5 microns.

Abstract: A solar cell and a method of forming a contact structure on a solar cell having a p-n junction formed between a first semiconductor region of a first dopant polarity and a second semiconductor region of a second dopant polarity opposite to the first dopant polarity. The method comprises: forming a plurality of contact points on a surface of the solar cell, whereby the contact points provide an electrical connection to the first semiconductor region; and locating a plurality of conducting wires over the solar cell to make electrical connection to the contact points. The contact points are either an exposed silicon surface or a silicon surface over which metal pads are formed. The metal pads may comprise a plated layer of a low-melting temperature metal and/or may have a thickness of less than 5 microns.

Abstract: A method of forming contacts on a surface emitter of a silicon solar cell is provided. In the method an n-type diffusion of a surface is performed to form a doped emitter surface layer that has a sheet resistance of 10-40 ?/?. The emitter surface layer is then etched back to increase the sheet resistance of the emitter surface layer. Finally the surface is selectively plated. A method of fabrication of a silicon solar cell includes performing a front surface emitter diffusion of n-type dopant and then performing a dielectric deposition on the front surface by PECVD. The dielectric deposition comprises: a. growth of a thin silicon oxide; b. PECVD deposition of silicon nitride to achieve a silicon nitride. The silicon is then annealed to drive hydrogen from the silicon nitride layer into the silicon to passivate the silicon.

Abstract: A method of forming contacts on a surface emitter of a silicon solar cell is provided. In the method an n-type diffusion of a surface is performed to form a doped emitter surface layer that has a sheet resistance of 10-40 ?/?. The emitter surface layer is then etched back to increase the sheet resistance of the emitter surface layer. Finally the surface is selectively plated. A method of fabrication of a silicon solar cell includes performing a front surface emitter diffusion of n-type dopant and then performing a dielectric deposition on the front surface by PECVD. The dielectric deposition comprises: a. growth of a thin silicon oxide; b. PECVD deposition of silicon nitride to achieve a silicon nitride. The silicon is then annealed to drive hydrogen from the silicon nitride layer into the silicon to passivate the silicon.