Patents by Inventor Budi Tjahjono
Budi Tjahjono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10199523Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.Type: GrantFiled: June 25, 2015Date of Patent: February 5, 2019Assignees: NEWSOUTH INNOVATIONS PTY LIMITED, SUNTECH POWER INTERNATIONAL LTD.Inventors: Alison Maree Wenham, Ziv Hameiri, Jing Jia Ji, Ly Mai, Zhengrong Shi, Budi Tjahjono, Stuart Ross Wenham
-
Patent number: 9728669Abstract: A method of manufacturing solar cell includes providing a semiconductor substrate. A coating layer is then formed on a plurality of sides. Subsequently, an anti-reflective layer is formed on the layer. Finally at least one first electrode and at least one second electrode are formed. The first and second electrodes respectively and electrically connect to the second conductive amorphous substrate and the semiconductor substrate. The potential induced degradation is greatly reduced.Type: GrantFiled: June 24, 2013Date of Patent: August 8, 2017Assignee: Sino-American Silicon Products Inc.Inventors: Budi Tjahjono, Ming-Jui Yang, Chuan-Wen Ting, Yu-Ting Chiu, Jen-Ting Tan, Wen Sheng Wu, Kuo-Wei Shen, Fang-Wei Hu
-
Publication number: 20160005915Abstract: A method for inhibiting light-induced degradation of a photovoltaic device includes steps of: a) subjecting the photovoltaic device to an illumination treatment using a light having a wavelength not less than 300 nm to heat the photovoltaic device in the absence of ambient light; and b) maintaining the temperature of the photovoltaic device above an annealing temperature of the photovoltaic device for at least 0.5 minute. An apparatus for inhibiting light-induced degradation of a photovoltaic device is also disclosed.Type: ApplicationFiled: July 1, 2015Publication date: January 7, 2016Applicant: Sino-American Silicon Products Inc.Inventors: Budi Tjahjono, Ming-Jui Yang, Chien-Hong Liu, Kuo-Wei Shen, Chuan-Wen Ting, Wen-Sheng Wu
-
Publication number: 20150318413Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.Type: ApplicationFiled: June 25, 2015Publication date: November 5, 2015Applicants: Suntech Power International Ltd., NewSouth Innovations Pty LimitedInventors: Alison Maree Wenham, Ziv Hameiri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham
-
Patent number: 9136126Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.Type: GrantFiled: February 11, 2010Date of Patent: September 15, 2015Assignee: NewSouth Innovations Pty LimitedInventors: Alison Maree Wenham, Ziv Hameiri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham
-
Publication number: 20150096613Abstract: The invention provides a photovoltaic device and method of manufacturing the same. The photovoltaic device of the invention includes a semiconductor structure assembly and a protection layer. The semiconductor structure assembly has a plurality of side surfaces, and includes a p-n junction, an n-p junction, a p-i-n junction, an n-i-p junction, a tandem junction or a multi-junction. In particular, the protection layer is formed to overlay the sides of the semiconductor structure assembly. Thereby, the protection layer can effectively inhibit the potential-induced degradation effect of the photovoltaic device of the invention.Type: ApplicationFiled: December 12, 2014Publication date: April 9, 2015Inventors: BUDI TJAHJONO, MING-JUI YANG, CHUAN-WEN TING, WEN SHENG WU, KUO-WEI SHEN, CHIEN HONG LIU
-
Patent number: 8962979Abstract: A photovoltaic device is provided in which a contact structure is formed having a plurality of heavily doped semi-conductor channels formed on a surface of a region to be contacted. The heavily doped semiconductor channels are of the same dopant polarity as the region to be contacted, and form lateral conduction paths across the surface of the region to be contacted. Contact metallization comprising conductive fingers are formed over the surface of the region to be contacted, and each conductive finger crosses at least some of the heavily doped channels to make electrical contact therewith. The contact structure is formed by forming a layer of dopant source material over the surface to be contacted, and laser doping heavily doped channels in the surface to be contacted. The contact metallization is then formed as conductive fingers formed over the surface to be contacted and may be screen printed, metal plated or may be formed as buried contacts.Type: GrantFiled: June 7, 2006Date of Patent: February 24, 2015Assignee: Newsouth Innovations Pty LimitedInventors: Stuart Ross Wenham, Budi Tjahjono, Ly Mai
-
Publication number: 20140251421Abstract: A method of manufacturing solar cell includes providing a semiconductor substrate. A coating layer is then formed on a plurality of sides. Subsequently, an anti-reflective layer is formed on the layer. Finally at least one first electrode and at least one second electrode are formed. The first and second electrodes respectively and electrically connect to the second conductive amorphous substrate and the semiconductor substrate. The potential induced degradation is greatly reduced.Type: ApplicationFiled: June 24, 2013Publication date: September 11, 2014Inventors: BUDI TJAHJONO, MING-JUI YANG, CHUAN-WEN TING, YU-TING CHIU, JEN-TING TAN, WEN SHENG WU, KUO-WEI SHEN, FANG-WEI HU
-
Publication number: 20120125424Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.Type: ApplicationFiled: February 11, 2010Publication date: May 24, 2012Applicants: Suntech Power International Ltd., New South Innovations Pty LimitedInventors: Alison Maree Wenham, Ziv Hameri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham
-
Patent number: 7998863Abstract: A method of forming a contact structure and a contact structure so formed is described. The structure contacts an underlying layer of a semiconductor junction, wherein the junction comprises the underlying layer of a semiconductor material and is separated from an overlying layer of semiconductor material by creating an undercut region to shade subsequent metal formation. Various steps are performed using inkjet printing techniques.Type: GrantFiled: May 22, 2008Date of Patent: August 16, 2011Assignee: Newsourth Innovations Pty LimitedInventors: Stuart Ross Wenham, Ly Mai, Nicole Bianca Kuepper, Budi Tjahjono
-
Publication number: 20090183768Abstract: A photovoltaic device is provided in which a contact structure is formed having a plurality of heavily doped semi-conductor channels formed on a surface of a region to be contacted. The heavily doped semiconductor channels are of the same dopant polarity as the region to be contacted, and form lateral conduction paths across the surface of the region to be contacted. Contact metallisation comprising conductive fingers are formed over the surface of the region to be contacted, and each conductive finger crosses at least some of the heavily doped channels to make electrical contact therewith. The contact structure is formed by forming a layer of dopant source material over the surface to be contacted, and laser doping heavily doped channels in the surface to be contacted. The contact metallisation is then formed as conductive fingers formed over the surface to be contacted and may be screen printed, metal plated or may be formed as buried contacts.Type: ApplicationFiled: June 7, 2006Publication date: July 23, 2009Inventors: Stuart Ross Wenham, Budi Tjahjono, Ly Mai
-
Publication number: 20090008787Abstract: A method of forming a contact structure and a contact structure so formed is described. The structure contacts an underlying layer of a semiconductor junction, wherein the junction comprises the underlying layer of a semiconductor material and is separated from an overlying layer of semiconductor material by creating an undercut region to shade subsequent metal formation. Various steps are performed using inkjet printing techniques.Type: ApplicationFiled: May 22, 2008Publication date: January 8, 2009Inventors: Stuart Ross WENHAM, Ly Mai, Nicole Bianca Kuepper, Budi Tjahjono