Patents by Inventor Buem-Suck Kim

Buem-Suck Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fuse of semiconductor device and method for fabricating the same
    Patent number: 8604585
    Abstract: A fuse of a semiconductor device includes a plurality of first conductive patterns, and a plurality of second conductive patterns filling spaces between the first conductive patterns and formed of a material which has a greater specific resistance than the first conductive patterns.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: December 10, 2013
    Assignee: Hynix Semiconductor Inc.
    Inventor: Buem-Suck Kim
  • SEMICONDUCTOR DEVICE WITH FUSE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20110147886
    Abstract: A method for fabricating a semiconductor with a fuse includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask to form a metal contact over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing the polysilicon hard mask exposed by the first hard mask pattern to form a polysilicon fuse connected to a portion of the polysilicon hard mask.
    Type: Application
    Filed: March 4, 2011
    Publication date: June 23, 2011
    Applicant: Hynix Semiconductor Inc.
    Inventor: Buem-Suck KIM
  • Semiconductor device with fuse and method for fabricating the same
    Patent number: 7923307
    Abstract: A method for fabricating a semiconductor with a fuse includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing the polysilicon hard mask exposed by the first mask pattern to form a portion of the polysilicon hard mask into a polysilicon fuse.
    Type: Grant
    Filed: June 27, 2008
    Date of Patent: April 12, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Buem-Suck Kim
  • FUSE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20110001212
    Abstract: A fuse of a semiconductor device includes a plurality of first conductive patterns, and a plurality of second conductive patterns filling spaces between the first conductive patterns and formed of a material which has a greater specific resistance than the first conductive patterns.
    Type: Application
    Filed: June 28, 2010
    Publication date: January 6, 2011
    Inventor: Buem-Suck KIM
  • SEMICONDUCTOR DEVICE WITH FUSE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20090166803
    Abstract: A method for fabricating a semiconductor with a fuse includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask to form a metal contact over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing the polysilicon hard mask exposed by the first hard mask pattern to form a polysilicon fuse connected to a portion of the polysilicon hard mask.
    Type: Application
    Filed: June 27, 2008
    Publication date: July 2, 2009
    Applicant: Hynix Semiconductor Inc.
    Inventor: Buem-Suck Kim
  • SEMICONDUCTOR DEVICE WITH FUSE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20090166802
    Abstract: A method for fabricating a semiconductor with a fuse includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask to form a metal contact over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing the polysilicon hard mask exposed by the first hard mask pattern to form a polysilicon fuse connected to a portion of the polysilicon hard mask.
    Type: Application
    Filed: June 27, 2008
    Publication date: July 2, 2009
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Buem-Suck KIM
  • Semiconductor device with leaning storage node contact and method for fabricating the same
    Publication number: 20080173979
    Abstract: A method for fabricating a semiconductor device including preparing a substrate provided with a first storage node contact, forming a second storage node contact over the first storage node contact, the second storage node contact leaning to one side, and forming a storage node of a capacitor over the second storage node contact.
    Type: Application
    Filed: November 15, 2007
    Publication date: July 24, 2008
    Inventor: Buem-Suck Kim