Patents by Inventor Bugeun KI

Bugeun KI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210036170
    Abstract: The present disclosure provides a photodiode which maintains a photodiode characteristic even after the metal-assisted chemical etching and uses a metal-semiconductor structure having low reflectance and high conductance, a manufacturing method thereof, and a solar cell using the same. The photodiode of the present disclosure includes a semiconductor substrate with a low reflective and high conductive surface which has a selectively etched electrode formation area and a high conductive electrode formed by placing a metal catalyst used for a metal-assisted chemical etching process for forming an antireflection semiconductor substrate in an etching area of the antireflection semiconductor substrate.
    Type: Application
    Filed: July 31, 2020
    Publication date: February 4, 2021
    Inventors: Jungwoo OH, Kyunghwan KIM, Bugeun KI, Keorock CHOI
  • Patent number: 9911615
    Abstract: The inventive concepts relate to an apparatus and a method for etching a substrate, a stamp for etching a substrate, and a method for manufacturing the stamp. The method for etching a substrate includes bringing a substrate into contact with a stamp including a pattern on which a metal catalyst is formed, and etching the substrate by a chemical reaction between the metal catalyst and an etching solution.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: March 6, 2018
    Assignee: Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Jungwoo Oh, Bugeun Ki, Yunwon Song, Keorock Choi, Kyung Ho Kim
  • Patent number: 9437441
    Abstract: A method of etching a substrate using a metal-assisted chemical etching process is provided. The method may include forming a metal catalytic layer to a predetermined thickness on a substrate and reacting the metal catalytic layer with the etching solution to form a porous surface in the metal catalytic layer and etch the substrate. When the metal catalytic layer is reacted with an etching solution, a porous surface may be formed on the metal catalytic layer.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: September 6, 2016
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Jungwoo Oh, Yunwon Song, Bugeun Ki, Keorock Choi
  • Publication number: 20160133478
    Abstract: A method of etching a substrate using a metal-assisted chemical etching process is provided. The method may include forming a metal catalytic layer to a predetermined thickness on a substrate and reacting the metal catalytic layer with the etching solution to form a porous surface in the metal catalytic layer and etch the substrate. When the metal catalytic layer is reacted with an etching solution, a porous surface may be formed on the metal catalytic layer.
    Type: Application
    Filed: August 25, 2015
    Publication date: May 12, 2016
    Inventors: Jungwoo OH, Yunwon SONG, Bugeun KI, Keorock CHOI
  • Publication number: 20160020112
    Abstract: The inventive concepts relate to an apparatus and a method for etching a substrate, a stamp for etching a substrate, and a method for manufacturing the stamp. The method for etching a substrate includes bringing a substrate into contact with a stamp including a pattern on which a metal catalyst is formed, and etching the substrate by a chemical reaction between the metal catalyst and an etching solution.
    Type: Application
    Filed: July 15, 2015
    Publication date: January 21, 2016
    Inventors: Jungwoo OH, Bugeun KI, Yunwon SONG, Keorock CHOI, Kyung Ho KIM