Abstract: A method tests a redundancy area of a semiconductor memory device. The method includes receiving a redundancy address to select a redundancy area including spare memory cells to repair normal memory cells, checking the redundancy address based on repair use information to determine whether the redundancy area is an actually repaired area, enabling the redundancy area when the redundancy area is the actually repaired area, and outputting data read from the enabled redundancy area to practically perform a redundancy area test.