Abstract: Methods of forming barrier layers and structures thereof are disclosed. A nitrogen rich region is formed at a top surface of a barrier layer by exposing the barrier layer to a nitridation treatment. The nitrogen rich region increases the oxidation resistance of the barrier layer. The barrier layers have improved diffusion barrier properties. A stack of barrier layers may be formed, with one or more of the barrier layers in the stack being exposed to a nitridation treatment.

Abstract: Methods of fully siliciding semiconductive materials of semiconductor devices are disclosed. A preferred embodiment comprises depositing an alloy comprised of a first metal and a second metal over a semiconductive material. The device is heated, causing atoms of the semiconductive material to move towards and bond to the atoms of the second metal, leaving vacancies in the semiconductive material, and causing atoms of the first metal to move into the vacancies in the semiconductive material.