Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract: An air conditioning system includes a phase separator separating a gaseous refrigerant and a liquid refrigerant from a flowing refrigerant, an evaporator evaporating the liquid refrigerant separated by the phase separator, and at least one compressor including a first compressing part receiving the refrigerant via the evaporator and a second compressing part receiving both of the gaseous refrigerant separated by the phase separator and the refrigerant via the first compressing part.

Abstract: Provided is an image rotation method and apparatus for rotating an original image of 2n×2n pixels when n is a natural number greater than 1, including loading each row of pixels of the original image into a corresponding load memory vector; and, after the load step, for at least one iteration, performing a transposition operation for each matched load memory vector after matching the load memory vectors and, for zero or more iterations, an interleaving operation between each matched load memory vector after matching the load memory vectors, while the transposition step and the interleaving step are performed a total of n iterations.

Abstract: The image sensor includes a pixel array including a plurality of pixels arranged in a non-red-green-blue (RGB) Bayer pattern, an analog-to-digital converter configured to convert an analog pixel signal output from each of the pixels into a digital pixel signal and an RGB converter configured to convert the digital pixel signal into an RGB Bayer signal. Accordingly, the image sensor is compatible with a universal image signal processor (ISP), which receives and processes RGB Bayer signals, without an additional compatible device or module.

Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor, including a wiring layer, a photodiode stacked with the wiring layer, a micro-lens stacked on the photodiode, an anti-reflection layer stacked on the photodiode. An anti-absorption layer may be provided between the photodiode and the anti-reflection layer. The photodiode may include a first portion and a second portion. Light may be focused on the first portion by the micro-lens and the second portion may at least partially surround the first portion. A material of the first portion may have a refractive index higher than a refractive index of a material of the second portion. The anti-absorption layer may include a compound semiconductor having an energy band gap greater than an energy band gap of a semiconductor included in the photodiode.

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract: The image sensor includes a pixel array including a plurality of pixels arranged in a non-red-green-blue (RGB) Bayer pattern, an analog-to-digital converter configured to convert an analog pixel signal output from each of the pixels into a digital pixel signal, and an RGB converter configured to convert the digital pixel signal into an RGB Bayer signal. Accordingly, the image sensor is compatible with a universal image signal processor (ISP), which receives and processes RGB Bayer signals, without an additional compatible device or module.

Abstract: The present invention relates to a production method for an ultra-low-dielectric-constant film, in which ratios are optimised in a mixed solution having a matrix consisting of a poly (alkyl silsesquioxane) copolymer and a porogen represented by Chemical formula 1, and in which this mixed solution is subjected to ultraviolet curing during a heat treatment. The ultra-low-dieletric-constant film of the present invention can be used as an intermediate insulating film for next generation semiconductors instead of the SiO2 dielectric films currently used, since pores of from 1 to 3 nm are uniformly distributed at from 10 to 30% and a very high degree of mechanical elasticity of from 10.5 to 19 GPa is achieved at a low dielectric constant from 2.12 to 2.4.

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract: The present invention provides a method for preparing a nanoporous ultra-low dielectric thin film including a high-temperature ozone treatment and nanoporous ultra-low dielectric thin film prepared by the same method. The method includes preparing a mixture of an organic silicate matrix-containing solution and a reactive porogen-containing solution; coating the mixture on a substrate to form a thin film; and heating the thin film with an ozone treatment. The prepared nanoporous ultra-low dielectric thin film could have a dielectric constant of about 2.3 or less and a mechanical strength of about 10 GPa or more by improving a pore size and a distribution of pores in the thin film by performing an ozone treatment with high temperature and optimization of the ozone treatment temperature.

Abstract: A backside illumination image sensor is provided. The backside illumination image sensor includes a plurality of different types of pixels, each pixel including a photodiode configured to accumulate photogenerated charges corresponding to light incident on a backside of a semiconductor substrate and a transfer transistor configured to transfer the photogenerated charges to a floating diffusion node; and a plurality of transfer lines disposed at a front side of the semiconductor substrate, the plurality of transfer lines connected to a gate of the transfer transistor of a respective one of the pixels, wherein transfer control signals respectively transmitted through the transfer lines produce different effective integration times in the pixels.

Abstract: An image sensor, an image processing apparatus including the same and an interpolation method of the image processing apparatus are provided. The image sensor includes a plurality of pixels that include a low-luminance pixel including a first photoelectric conversion device that accumulates a charge less than a predetermined reference value and a high-luminance pixel including a second photoelectric conversion device that accumulates a charge more than the predetermined reference value. Interpolation is carried out giving more weight to the low-luminance pixel at low luminance and giving more weight to the high-luminance pixel at high luminance, so that a higher SNR is obtained.

Abstract: A color filter array includes a plurality of white filters, a plurality of yellow filters, a plurality of cyan filters and a plurality of green filters. The plurality of white filters transmits incident light. The plurality of yellow filters transmits a green component and a red component of the incident light. The plurality of cyan filters transmits the green component and a blue component of the incident light. The plurality of green filters transmits the green component of the incident light. An image sensor including the color filter array has high sensitivity and high SNR by increasing transmittance of the incident light.

Abstract: A color filter array is provided. The color filter array includes a plurality of basic filter blocks arranged in all directions. Each of the basic filter blocks include one or more color filters. The color filters include a first type color filter that passes through all light without filtering it or has a higher light transmittance than a second type color filter, a third type color filter, and a fourth type color filter. The second through fourth color filters being a red, green or blue filter. Accordingly, the color filter array increases sensitivity to incident light or increases brightness of outgoing light.

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract: A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo converting device does not include a neutral region that has a constant potential in the vertical direction. Therefore, the image sensor including the pixel cell has high quantization efficiency, and a crosstalk between photo-converting devices is decreased.

Abstract: An image pickup device includes a pixel array including a plurality of photo sensitive devices and a color filter array including a plurality of color filters each disposed above a corresponding one of the plurality of photo sensitive devices. The color filters include a first type color filter formed on a glass substrate to filter light to pass a first spectrum and a second type color filter stacked on at least part of the first type color filter to filter light to pass a second spectrum. Accordingly, fabrication of a color filter array can be simplified and a color filter array having a small lay out can be fabricated.

Abstract: The present invention relates to a production method for an ultra-low-dielectric-constant film, in which ratios are optimised in a mixed solution having a matrix consisting of a poly (alkyl silsesquioxane) copolymer and a porogen represented by Chemical formula 1, and in which this mixed solution is subjected to ultraviolet curing during a heat treatment. The ultra-low-dieletric-constant film of the present invention can be used as an intermediate insulating film for next generation semiconductors instead of the SiO2 dielectric films currently used, since pores of from 1 to 3 nm are uniformly distributed at from 10 to 30% and a very high degree of mechanical elasticity of from 10.5 to 19 GPa is achieved at a low dielectric constant from 2.12 to 2.4.

Abstract: A unit pixel array of an image sensor includes a semiconductor substrate having a plurality of unit pixels, an interlayer insulating layer disposed on a front side of the semiconductor substrate, a plurality of color filters disposed on a back side of the semiconductor substrate, a plurality of light path converters, each of the light path converters being disposed adjacent to at least one color filter and having a pair of slanted side edges extending from opposing ends of a horizontal bottom edge, and a plurality of micro lenses disposed on the color filters.

Abstract: A method of manufacturing a backside illuminated image sensor, including forming a first isolation layer in a first semiconductor layer, such that the first isolation layer defines pixels of a pixel array in the first semiconductor layer, forming a second semiconductor layer on a first surface of the first semiconductor layer, forming a second isolation layer in the second semiconductor layer, such that the second isolation layer defines active device regions in the second semiconductor layer, forming photo detectors and circuit devices by implanting impurities into a first surface of the second semiconductor layer, the first surface of the second semiconductor layer facing away from the first semiconductor layer, forming a wiring layer on the first surface of the second semiconductor layer, and forming a light filter layer on a second surface of the first semiconductor layer.