Abstract: A bispecific antibody according to an embodiment of the present disclosure specifically binds to IL-17A and TNF-?. The bispecific antibody according to the present invention or an antigen binding fragment thereof exhibits high specificity for IL-17A and TNF-? and more favorable neutralization property compared to monospecific antibody of a prior art, and, by quickly suppressing inflammation and an immune response by inhibiting simultaneously IL-17 and TNF-?, it has an advantage of improving the treatment effect with lower dose.

Abstract: A bunkering vessel according to the present invention is for loading a liquefied gas to and unloading a liquefied gas from a liquefied gas storage tank of a target, and it includes a bunkering tank storing a liquefied gas; a manifold provided at a bunkering station of the bunkering vessel to flow in a liquefied gas to and flow out a liquefied gas from the bunkering vessel; a liquefied gas transfer line connecting the bunkering tank and the manifold to flow a liquefied gas; and a dry gas supply portion producing a dry gas, and the dry gas supply portion supplies a dry gas to the liquefied gas storage tank through the manifold before loading a liquefied gas to the liquefied gas storage tank to remove moisture inside the liquefied gas storage tank.

Abstract: A bunkering vessel according to the present invention is for loading a liquefied gas to and unloading a liquefied gas from a liquefied gas storage tank of a target, and it includes a bunkering tank storing a liquefied gas; a manifold provided at a bunkering station of the bunkering vessel to flow in a liquefied gas to and flow out a liquefied gas from the bunkering vessel; a liquefied gas transfer line connecting the bunkering tank and the manifold to flow a liquefied gas; and a dry gas supply portion producing a dry gas, and the dry gas supply portion supplies a dry gas to the liquefied gas storage tank through the manifold before loading a liquefied gas to the liquefied gas storage tank to remove moisture inside the liquefied gas storage tank.

Abstract: An infrared absorber includes a compound represented by Chemical Formula 1. An infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the infrared absorber. In Chemical Formula 1, Ar, X1, X2, Y1, Y2, R1, R2, R11, R12, R13, and R14 are the same as defined in the detailed description.

Abstract: A capacitor component includes a body, including a dielectric layer and an internal electrode layer, and an external electrode disposed on one surface of the body. The external electrode includes a conductive base and a glass disposed in the conductive base, and the glass includes 0.01 wt % or more to 5.8 wt % or less of nitrogen (N) based on a total weight of the glass.

Abstract: Disclosed are a compound represented by Chemical Formula 1, a film, a photoelectric diode, an organic sensor, and an electronic device. In Chemical Formula 1, Ar1 and Ar2, Z, L1, L2, and R1 to R6 are the same as defined in the detailed description.

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.

Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, X1, X2, Y1, Y2, Ar, Ar1, and Ar2 are the same as defined in the detailed description.

Abstract: A composition may include a compound, a film may include the composition, an organic layer of an organic sensor and/or photoelectric diode may include the compound, and the film, organic sensor, and/or photoelectric diode may be included in an electronic device.

Abstract: A sensor includes a visible light sensor configured to sense light in a visible wavelength spectrum, a near infra-red light sensor on the visible light sensor and configured to sense light in a near infra-red wavelength spectrum, and an optical filter on the near infra-red light sensor and configured to selectively transmit the light in the visible wavelength spectrum and the light in the near infra-red wavelength spectrum, and an electronic device.

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

Abstract: An infrared absorber includes a compound represented by Chemical Formula 1. An infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the infrared absorber. In Chemical Formula 1, Ar, X1, X2, Y1, Y2, R1, R2, R11, R12, R13, and R14 are the same as defined in the detailed description.

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

Abstract: A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.

Abstract: Disclosed are a compound represented by Chemical Formula 1, a film, a photoelectric diode, an organic sensor, and an electronic device. In Chemical Formula 1, Ar1 and Ar2, Z, L1, L2, and R1 to R6 are the same as defined in the detailed description.

Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, X1, X2, Y1, Y2, Ar, Ar1, and Ar2 are the same as defined in the detailed description.

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.

Abstract: A sensor includes a visible light sensor configured to sense light in a visible wavelength spectrum, a near infra-red light sensor on the visible light sensor and configured to sense light in a near infra-red wavelength spectrum, and an optical filter on the near infra-red light sensor and configured to selectively transmit the light in the visible wavelength spectrum and the light in the near infra-red wavelength spectrum, and an electronic device.