Abstract: A two-stage amplifier circuit fabricated in a dual gate oxide fabrication process having thick gate oxide devices as high voltage MOS transistors and thin gate oxide devices as low voltage MOS transistors includes a first stage amplifier and a second stage amplifier. The first stage amplifier receives a first pair of differential input voltages and provides a first pair of differential output voltages referenced to a first output common mode voltage. The second stage amplifier receives the first pair of differential output voltages of the first stage amplifier and provides a second pair of differential output voltages referenced to a second output common mode voltage. The first and second pair of input transistors are low voltage MOS transistors and the first output common mode voltage has a voltage value that is minimized to maximize the voltage swing of the second pair of differential output voltages.