Abstract: A memory device including a memory cell array region, includes, column selection signal lines formed in a first column conduction layer of the memory cell array region and extending in a column direction, global input-output data lines formed in a second column conduction layer of the memory cell array region different from the first column conduction layer and extending in the column direction and power lines formed in a shield conduction layer of the memory cell array region between the first column conduction layer and the second column conduction layer. The noises in the signal lines and the power lines may be reduced and performance of the memory device may be enhanced by forming the column selection signal lines and the global input-output data lines in different column conduction layers and forming the power lines in the shield conduction layer between the column conduction layers.

Abstract: A memory device including a memory cell array region, includes, column selection signal lines formed in a first column conduction layer of the memory cell array region and extending in a column direction, global input-output data lines formed in a second column conduction layer of the memory cell array region different from the first column conduction layer and extending in the column direction and power lines formed in a shield conduction layer of the memory cell array region between the first column conduction layer and the second column conduction layer. The noises in the signal lines and the power lines may be reduced and performance of the memory device may be enhanced by forming the column selection signal lines and the global input-output data lines in different column conduction layers and forming the power lines in the shield conduction layer between the column conduction layers.

Abstract: The present invention provides a method of preparing a polymer particle. More precisely, the invention provides a polymer particle having optimum impact strength and improved elastic recovery rate by forming the brush having softness on the surface of the monodisperse polymer particle by the anion dispersion polymerization using a conjugated diene monomer.

Abstract: The present invention provides a polymer particle and a method of preparing the same. More precisely, the invention provides a polymer particle having optimum impact strength and improved elastic recovery rate by forming the brush having softness on the surface of the monodisperse polymer particle by the anion dispersion polymerization using a conjugated diene monomer.

Abstract: Provided are hydrophobic layer formed by polymer represented by Formula 1 below and has a weight average molecular weight of about 10,000 to about 500,000 g/mol, hydrophobic layer including the polymer and an electronic articles including the hydrophobic layer: wherein Q1, and Q2 are independently linear or branched C1-C10 alkylene groups, R1 and R2 are independently ether and/or ester containing substituents, R3 to R7 are independently selected from a hydrogen atom, a halogen atom, a cyano group, an amino group, a C1-C10 alkyl group and a C6-C12 aryl group; and the ratio of a:b+c is from 10:1 to 1:1,000. A coated electronic article comprising the hydrophobic layer and a method of forming the coated electronic article are also provided.

Abstract: The present invention provides a polymer particle and a method of preparing the same. More precisely, the invention provides a polymer particle having optimum impact strength and improved elastic recovery rate by forming the brush having softness on the surface of the monodisperse polymer particle by the anion dispersion polymerization using a conjugated diene monomer.

Abstract: Provided are hydrophobic layer formed by polymer represented by Formula 1 below and has a weight average molecular weight of about 10,000 to about 500,000 g/mol, hydrophobic layer including the polymer and an electronic articles including the hydrophobic layer: wherein Q1, and Q2 are independently linear or branched C1-C10 alkylene groups, R1 and R2 are independently ether and/or ester containing substituents, R3 to R7 are independently selected from a hydrogen atom, a halogen atom, a cyano group, an amino group, a C1-C10 alkyl group and a C6-C12 aryl group; and the ratio of a:b+c is from 10:1 to 1:1,000. A coated electronic article comprising the hydrophobic layer and a method of forming the coated electronic article are also provided.

Abstract: A semiconductor memory device having a bit line sense amplifier connected to a bit line pair may include a precharge part to precharge first and second drive nodes of the bit line sense amplifier to an equal voltage level. The device may include a switching part operatively connecting the first and second precharge nodes to the first and second drive nodes in response to sense amplifier drive signals applied during a data non-access mode. To drive power in the bit line sense amplifier, the precharge voltage may be applied in a precharge state to precharge the first and second drive nodes to the equal voltage level, the device may shift from the precharge state to an operational state to cut off the applied precharge voltage, and driving voltages may be applied to the first and second drive nodes to power the bit line sense amplifier of the device.

Abstract: A semiconductor memory device having a bit line sense amplifier connected to a bit line pair may include a precharge part to precharge first and second drive nodes of the bit line sense amplifier to an equal voltage level. The device may include a switching part operatively connecting the first and second precharge nodes to the first and second drive nodes in response to sense amplifier drive signals applied during a data non-access mode. To drive power in the bit line sense amplifier, the precharge voltage may be applied in a precharge state to precharge the first and second drive nodes to the equal voltage level, the device may shift from the precharge state to an operational state to cut off the applied precharge voltage, and driving voltages may be applied to the first and second drive nodes to power the bit line sense amplifier of the device.

Abstract: A device for putt-practice is disclosed. This device has a first casing opened at its opposite ends, with a speed sensor provided at each end of the first casing and a ball inlet formed at one end of the first casing. A second casing, opened at its opposite ends, is axially connected to an end of the first casing, with a transparent window provided at the upper portion of the second casing for guiding a backstroke movement of a putter during an act of putting. This second casing also has a displaying means for displaying a target putting distance preset by a user, a practical backstroke distance of the putter, and putting results after the act of putting.

Abstract: A device for putt-practice is disclosed. This device has a first casing opened at its opposite ends, with a speed sensor provided at each end of the first casing and a ball inlet formed at one end of the first casing. A second casing, opened at its opposite ends, is axially connected to an end of the first casing, with a transparent window provided at the upper portion of the second casing for guiding a backstroke movement of a putter during an act of putting. This second casing also has a displaying means for displaying a target putting distance preset by a user, a practical backstroke distance of the putter, and putting results after the act of putting. The device of this invention thus allows the user to preset a desired putting distance, and senses the backstroke distance of a putter during an act of putting in accordance with the preset putting distance. The user is thus allowed to putt with a precise backstroke of the putter.