Patents by Inventor Bum Ki Min

Bum Ki Min has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device
    Patent number: 10930656
    Abstract: A memory device may be provided that includes: a substrate; a coupling layer which is located on the substrate and has electrical conductivity; a meta-atomic layer which is located on or under the coupling layer; a memory layer which is located on the meta-atomic layer; and an electrode layer which is located on the memory layer and has electrical conductivity. The memory layer is composed of a material which produces spontaneous polarization at a voltage equal to or higher than a predetermined voltage. Through this, the memory device can be electrically driven and can continuously maintain modulated optical characteristics. Also, the memory device according to the embodiment of the present invention can modulate optical characteristics by multiple electrical inputs.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: February 23, 2021
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Bum Ki Min, Woo Young Kim, Hyeon Don Kim, Teun Teun Kim, Seung Hoon Lee
  • MEMORY DEVICE
    Publication number: 20190051658
    Abstract: A memory device may be provided that includes: a substrate; a coupling layer which is located on the substrate and has electrical conductivity; a meta-atomic layer which is located on or under the coupling layer; a memory layer which is located on the meta-atomic layer; and an electrode layer which is located on the memory layer and has electrical conductivity. The memory layer is composed of a material which produces spontaneous polarization at a voltage equal to or higher than a predetermined voltage. Through this, the memory device can be electrically driven and can continuously maintain modulated optical characteristics. Also, the memory device according to the embodiment of the present invention can modulate optical characteristics by multiple electrical inputs.
    Type: Application
    Filed: December 13, 2016
    Publication date: February 14, 2019
    Applicant: Korea Advanced Institute of Science And Technology
    Inventors: Bum Ki MIN, Woo Young KIM, Hyeon Don KIM, Teun Teun KIM, Seung Hoon LEE
  • HIGH-REFRACTIVE-INDEX METALMATERIAL
    Publication number: 20130342915
    Abstract: The present invention provides a metamaterial having a high refractive index that cannot be found in natural materials. The high-refractive-index metamaterial includes a dielectric substrate and a conductive layer formed on the dielectric substrate. The conductive layer includes a plurality of unit grids defining a specified gap therebetween. The metamaterial has a refractive index equal to or larger than the refractive index of the substrate in a predetermined frequency range.
    Type: Application
    Filed: February 16, 2012
    Publication date: December 26, 2013
    Inventors: Bum Ki Min, Seung Hoon Lee, Mu Han Choi, Yu Shin Kim