Abstract: The present disclosure relates to an organometallic compound having the following structure of Chemical Formula 1, Ir(LA)m(LB)n, an organic light emitting diode (OLED) where the organometallic compound is applied to an emitting material layer and an organic light emitting device. The luminous efficiency, color purity and luminous lifespan of the OLED and the organic light emitting device can be improved.

Abstract: A video encoding method and a video decoding method are provided for adaptively determining a chroma intra-directional prediction mode. When a DM mode is applied for intra prediction of a chroma signal, the video encoding method and the video decoding method adaptively modify the directional mode of a luma block to conform to the characteristics of a chroma block by considering the position and size of the chroma block, the presence of reference samples, and the size of the luma block. The video encoding method and the video decoding method use the modified directional mode for intra prediction of the chroma signal.

Abstract: A monoclonal antibody or an antigen-binding fragment thereof according to an embodiment of the present invention can bind to lymphocyte-activation gene 3 (LAG-3) including a heavy chain variable region and a light chain variable region and inhibit the activity thereof. Thus it is expected to be useful for the development of immunotherapeutic agents for various disorders that are associated with LAG-3.

Abstract: Disclosed are a compound represented by Chemical Formula 1, a film, a photoelectric diode, an organic sensor, and an electronic device. In Chemical Formula 1, Ar1 and Ar2, Z, L1, L2, and R1 to R6 are the same as defined in the detailed description.

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.

Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, X1, X2, Y1, Y2, Ar, Ar1, and Ar2 are the same as defined in the detailed description.

Abstract: A composition may include a compound, a film may include the composition, an organic layer of an organic sensor and/or photoelectric diode may include the compound, and the film, organic sensor, and/or photoelectric diode may be included in an electronic device.

Abstract: A sensor includes a visible light sensor configured to sense light in a visible wavelength spectrum, a near infra-red light sensor on the visible light sensor and configured to sense light in a near infra-red wavelength spectrum, and an optical filter on the near infra-red light sensor and configured to selectively transmit the light in the visible wavelength spectrum and the light in the near infra-red wavelength spectrum, and an electronic device.

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

Abstract: An infrared absorber includes a compound represented by Chemical Formula 1. An infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the infrared absorber. In Chemical Formula 1, Ar, X1, X2, Y1, Y2, R1, R2, R11, R12, R13, and R14 are the same as defined in the detailed description.

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

Abstract: A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.

Abstract: Disclosed are a compound represented by Chemical Formula 1, a film, a photoelectric diode, an organic sensor, and an electronic device. In Chemical Formula 1, Ar1 and Ar2, Z, L1, L2, and R1 to R6 are the same as defined in the detailed description.

Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, X1, X2, Y1, Y2, Ar, Ar1, and Ar2 are the same as defined in the detailed description.

Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.

Abstract: A sensor includes a visible light sensor configured to sense light in a visible wavelength spectrum, a near infra-red light sensor on the visible light sensor and configured to sense light in a near infra-red wavelength spectrum, and an optical filter on the near infra-red light sensor and configured to selectively transmit the light in the visible wavelength spectrum and the light in the near infra-red wavelength spectrum, and an electronic device.

Abstract: A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.

Abstract: A composition may include a compound, a film may include the composition, an organic layer of an organic sensor and/or photoelectric diode may include the compound, and the film, organic sensor, and/or photoelectric diode may be included in an electronic device.