Patents by Inventor Bun-Hei Koo

Bun-Hei Koo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240352585
    Abstract: The present invention relates to a support socket and a method for manufacturing a part having a deposited layer using the support sockets. A support socket according to one embodiment of the present invention, which consists of a top surface, a bottom surface, and side surfaces connecting the top surface and the bottom surface to each other, comprises: a groove formed on the bottom surface toward the top surface; and a machining reference surface as a plane forming the bottom of the groove.
    Type: Application
    Filed: July 14, 2022
    Publication date: October 24, 2024
    Inventors: Bun-hei KOO, Sung-ho LEE, Hyeon-jun CHO
  • Publication number: 20230068125
    Abstract: The present disclosure relates to a part including silicon carbide layer and manufacturing method thereof, and the manufacturing method according to the present disclosure includes preparing a graphite substrate, and laminating a silicon carbide layer on a surface of the graphite substrate, wherein at the laminating the silicon carbide layer, the silicon carbide layer is laminated such that the thickness of the silicon carbide layer is 0.01 to 1 times the thickness of the graphite substrate, thereby improving the durability of the part including silicon carbide layer.
    Type: Application
    Filed: January 28, 2021
    Publication date: March 2, 2023
    Inventors: Jong-hwa WEON, Bun-hei KOO, In-su HWANG, Nam-ju KIM, Myung-jin KO, Ji-hoon LEE, Hyeon-jun CHO
  • Publication number: 20210296114
    Abstract: The disclosure relates to a thin film forming device and a thin film forming method using the same capable of improving the film quality of a silicon thin film by dividing a reaction space in a process chamber of the thin film forming device and thereby forming the silicon thin film on a substrate in a first space and treating a surface of the silicon thin film, formed in the first space, in a second space by using plasma. By the thin film forming device and the thin film forming method using the same according to the disclosure, with a trend that a pattern is complicated and the depth of the pattern increases, impurities in a thin film may be more efficiently removed, a uniform thin film may be formed on a pattern, and the grain size of the crystals of a silicon thin film may be made uniform.
    Type: Application
    Filed: August 21, 2019
    Publication date: September 23, 2021
    Inventors: Bun Hei KOO, Chul-Joo HWANG
  • Patent number: 8415655
    Abstract: The present disclosure relates to a semiconductor light-emitting device which includes: a light-emitting layer composed of an active layer and of barrier layers formed as superlattice layers and disposed on and under the active layer to relieve stresses applied to the active layer and reduce the sum of electric fields generated in the active layer by the spontaneous polarization and the piezoelectric effect; an N-type contact layer injecting electrons into the light-emitting layer; and a P-type contact layer disposed opposite to the N-type contact layer with respect to the light-emitting layer and injecting holes into the light-emitting layer, wherein the active layer contains InGaN, and the barrier layers are formed by alternately stacking of an AlGaN thin film and an InGaN thin film.
    Type: Grant
    Filed: August 12, 2009
    Date of Patent: April 9, 2013
    Assignee: Wooree E&L Co., Ltd.
    Inventors: Jung Tae Jang, Bun Hei Koo, Do Yeol Ahn, Seoung Hwan Park
  • Patent number: 8294178
    Abstract: There is provided a light emitting device using a compound semiconductor, which can improve electrical characteristics and internal quantum efficiency by maximizing the recombination rate of electrons and holes in an active layer. The light emitting device using a compound semiconductor includes a substrate; a compound semiconductor layer formed on the substrate, the compound semiconductor layer comprising an active layer; and a current spreading layer formed on at least one of the top and bottom surfaces of the active layer, the current spreading layer allowing electrons or holes to be uniformly spread into the active layer.
    Type: Grant
    Filed: December 2, 2008
    Date of Patent: October 23, 2012
    Assignee: Wooree E&L Co., Ltd.
    Inventors: Bun-Hei Koo, Jae-Eung Oh
  • Patent number: 8294164
    Abstract: The present invention relates to a light-emitting device using a clad layer consisting of asymmetric units, wherein the clad layer is provided by repeatedly stacking a unit having an asymmetric energy bandgap on upper and lower portions of an active layer, and the inflow of both electrons and holes into the active layer is arbitrarily controlled through the clad layer, so that the internal quantum efficiency can be improved. The light-emitting device using the clad layer consisting of the asymmetric units according to the present invention is characterized in that the clad layer is provided on at least one of the upper and lower portions of the active layer and consists of one or plural units, wherein the unit has a structure in which the first to nth unit layers (n is a natural number equal to or greater than three) having different energy bandgaps are sequentially stacked and has an asymmetric energy band diagram.
    Type: Grant
    Filed: October 14, 2010
    Date of Patent: October 23, 2012
    Assignee: WOOREE LST Co. Ltd.
    Inventors: Jae-Eung Oh, Young-Kyun Noh, Bun-Hei Koo
  • Publication number: 20110140079
    Abstract: The present disclosure relates to a semiconductor light-emitting device which includes: a light-emitting layer composed of an active layer and of barrier layers formed as superlattice layers and disposed on and under the active layer to relieve stresses applied to the active layer and reduce the sum of electric fields generated in the active layer by the spontaneous polarization and the piezo; an N-type contact layer injecting electrons into the light-emitting layer; and a P-type contact layer disposed opposite to the N-type contact layer with respect to the light-emitting layer and injecting holes into the light-emitting layer, wherein the active layer contains InGaN, and the barrier layers are formed by alternately stacking of an AlGaN thin film and an InGaN thin film.
    Type: Application
    Filed: August 12, 2009
    Publication date: June 16, 2011
    Applicant: Wooree LST CO., LTD
    Inventors: Jung Tae Jang, Bun Hei Koo, Do Yeol Ahn, Seoung Hwan Park
  • Publication number: 20110084249
    Abstract: The present invention relates to a light-emitting device using a clad layer consisting of asymmetric units, wherein the clad layer is provided by repeatedly stacking a unit having an asymmetric energy bandgap on upper and lower portions of an active layer, and the inflow of both electrons and holes into the active layer is arbitrarily controlled through the clad layer, so that the internal quantum efficiency can be improved. The light-emitting device using the clad layer consisting of the asymmetric units according to the present invention is characterized in that the clad layer is provided on at least one of the upper and lower portions of the active layer and consists of one or plural units, wherein the unit has a structure in which the first to nth unit layers (n is a natural number equal to or greater than three) having different energy bandgaps are sequentially stacked and has an asymmetric energy band diagram.
    Type: Application
    Filed: October 14, 2010
    Publication date: April 14, 2011
    Applicant: WOOREE LST CO., LTD.
    Inventors: Jae-Eung Oh, Young-Kyun Noh, Bun-Hei Koo
  • Publication number: 20110006320
    Abstract: There is provided a light emitting device using a compound semiconductor, which can improve electrical characteristics and internal quantum efficiency by maximizing the recombination rate of electrons and holes in an active layer. The light emitting device using a compound semiconductor includes a substrate; a compound semiconductor layer formed on the substrate, the compound semiconductor layer comprising an active layer; and a current spreading layer formed on at least one of the top and bottom surfaces of the active layer, the current spreading layer allowing electrons or holes to be uniformly spread into the active layer.
    Type: Application
    Filed: December 2, 2008
    Publication date: January 13, 2011
    Applicant: WOOREE LST CO., LTD.
    Inventors: Bun-Hei Koo, Jae-Eung Oh