Abstract: A step gain amplifier has an amplifier with an input and an output, and a bias circuit connected to the input and to a bias node. A passive feedback circuit using only passive elements connects the output to the input. A control circuit is connected to the bias circuit at the bias node.

Abstract: A step gain amplifier has an amplifier with an input and an output, and a bias circuit connected to the input and to a bias node. A passive feedback circuit using only passive elements connects the output to the input. A control circuit is connected to the bias circuit at the bias node.

Abstract: An attenuator system comprises an attenuator and a control circuit for controlling the attenuation of the attenuator. In one embodiment, the attenuator comprises two diodes or two diode connected transistors, and the control circuit comprises two transistors as the only active devices. In another embodiment, the control circuit comprises another transistor in a shut down circuit.

Abstract: An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.

Abstract: An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.

Abstract: An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.

Abstract: An attenuator system comprises an attenuator and a control circuit for controlling the attenuation of the attenuator. In one embodiment, the attenuator comprises two diodes or two diode connected transistors, and the control circuit comprises two transistors as the only active devices. In another embodiment, the control circuit comprises another transistor in a shut down circuit.

Abstract: An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal.

Abstract: An RF power amplifier includes a plurality of amplifier cells. Each amplifier cell includes a bipolar transistor and a base circuit that comprises an RF coupling capacitor, a bias resistor, a base capacitor, and a base resistor. The base circuit transmits DC bias current and an RF signal to the base of the bipolar transistor to provide a selectable frequency response. The base circuit may be implemented using a structure of stacked capacitors.

Abstract: An RF power amplifier includes a plurality of amplifier cells. Each amplifier cell includes a bipolar transistor and a base circuit that comprises an RF coupling capacitor, a bias resistor, a base capacitor, and a base resistor. The base circuit transmits DC bias current and an RF signal to the base of the bipolar transistor to provide a selectable frequency response. The base circuit may be implemented using a structure of stacked capacitors.

Abstract: The present invention provides a modulator which has a high degree of modulation and a good modulation sensitivity. The modulator comprises an oscillating circuit and a resonator portion, and this resonator portion comprises a reflective circuit board, a coupling line which is disposed on the reflective circuit board, a coupled load which is coupled to one end of the coupling line, a dielectric resonator which is disposed on the reflective circuit board and which is magnetically coupled with the coupling line, a window portion which is formed in the undersurface of the reflective circuit board directly beneath the coupling line, a waveguide resonator which is disposed on the undersurface of the reflective circuit board in the area that includes the window portion, and which is magnetically coupled with the coupling line, and a varactor diode which is inserted between the opposite signal conductor surfaces and of the waveguide resonator, and to which the input modulating signal terminal is connected.

Abstract: An oscillator generates an oscillation signal, and a phase shifter outputs a phase shift oscillation signal corresponding to a difference between a frequency of the oscillation signal and a target frequency. A multiplier outputs a multiplied signal corresponding to a multiplied value of the phase shift signal and the oscillation signal, and an error signal generator outputs an error signal according to the multiplied signal. The output frequency of the oscillator is controlled according to the error signal.

Abstract: The present invention provides a modulator which has a high degree of modulation and a good modulation sensitivity. The modulator comprises an oscillating circuit and a resonator portion, and this resonator portion comprises a reflective circuit board, a coupling line which is disposed on the reflective circuit board, a coupled load which is coupled to one end of the coupling line, a dielectric resonator which is disposed on the reflective circuit board and which is magnetically coupled with the coupling line, a window portion which is formed in the undersurface of the reflective circuit board directly beneath the coupling line, a waveguide resonator which is disposed on the undersurface of the reflective circuit board in the area that includes the window portion, and which is magnetically coupled with the coupling line, and a varactor diode which is inserted between the opposite signal conductor surfaces and of the waveguide resonator, and to which the input modulating signal terminal is connected.

Abstract: An oscillator generates an oscillation signal, and a phase shifter outputs a phase shift oscillation signal corresponding to a difference between a frequency of the oscillation signal and a target frequency. A multiplier which outputs a multiplied signal corresponding to a multiplied value of the phase shift signal and the oscillation signal, and an error signal generator outputs an error signal according to the multiplied signal. The output frequency of the oscillator is controlled according to the error signal.q1.

Abstract: A transmission front-end processor modulates the amplitude of a carrier wave with baseband data, and sets the power of the resultant modulated wave at a required value while controlling power leakage to adjoining channel to thereby output transmission data. The processor includes a first filter connected to an input terminal to which the baseband data are applied, for removing frequency components which would otherwise cause the power of the baseband data to leak to adjoining channels. The carrier wave and the baseband data passed through the first filter are applied to a power modulator. The power modulator controls the amplitude of the carrier wave with the baseband data, sets the power of the result of the control at the required value, and then outputs the power. A second filter removes higher order components from the carrier wave included in the output of the power modulator to thereby output the transmission data.